BLF7G22LS-130,112 NXP Semiconductors, BLF7G22LS-130,112 Datasheet - Page 6

• Manufacturer Part Number: BLF7G22LS-130,112
• Description: TRANSISTOR PWR LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-130,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063501112

NXP Semiconductors
BLF7G22L-130_7G22LS-130
Product data sheet
Fig 5.
Fig 7.
ACPR
(dBc)
(dB)
G
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
−20
−40
−60
p
20
19
18
17
16
15
5M
0
0
V
Power gain as a function of load power;
typical values
0
V
Adjacent channel power ratio (5MHz) as a
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
7.4 1-carrier W-CDMA
(1)
(2)
(3)
Dq
Dq
30
30
= 950 mA.
= 950 mA.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
(3)
(2)
(1)
60
60
P
P
All information provided in this document is subject to legal disclaimers.
L
L
001aal345
001aal348
(W)
(W)
BLF7G22L-130; BLF7G22LS-130
Rev. 4 — 20 January 2011
90
90
Fig 6.
Fig 8.
PAR
(dB)
(%)
η
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
D
60
40
20
0
8
6
4
2
0
0
0
V
Drain efficiency as a function of load power;
typical values
V
Peak-to-average power ratio as a function of
load power; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
30
30
= 950 mA.
= 950 mA.
Power LDMOS transistor
(1)
(2)
(3)
(1)
(2)
(3)
60
60
© NXP B.V. 2011. All rights reserved.
P
P
L
L
001aal346
001aal347
(W)
(W)
90
90
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