BLF7G22LS-130,112 NXP Semiconductors, BLF7G22LS-130,112 Datasheet - Page 7

• Manufacturer Part Number: BLF7G22LS-130,112
• Description: TRANSISTOR PWR LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-130,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063501112

NXP Semiconductors
BLF7G22L-130_7G22LS-130
Product data sheet
Fig 9.
Fig 11. Adjacent channel power ratio (5 MHz) as a function of load power; typical values
(dB)
G
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
p
20
19
18
17
16
15
0
V
Power gain as a function of load power;
typical values
V
DS
DS
= 28 V; I
= 28 V; I
10
7.5 2-carrier W-CDMA (5 MHz carrier spacing)
20
Dq
Dq
(3)
(2)
(1)
= 950 mA; carrier spacing 5 MHz.
= 950 mA; carrier spacing 5 MHz.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
30
40
ACPR
(dBc)
−20
−40
−60
50
5M
0
0
All information provided in this document is subject to legal disclaimers.
P
L
001aal351
60
(W)
10
BLF7G22L-130; BLF7G22LS-130
(1)
Rev. 4 — 20 January 2011
70
20
(2)
30
(3)
Fig 10. drain efficiency as a function of load power;
40
(%)
η
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
D
50
50
40
30
20
10
0
0
V
typical values
P
DS
L
001aal354
60
(W)
= 28 V; I
10
70
20
Dq
= 950 mA; carrier spacing 5 MHz.
30
Power LDMOS transistor
40
50
© NXP B.V. 2011. All rights reserved.
(1)
(2)
(3)
P
L
001aal353
60
(W)
70
7 of 15