BLF6G27-100,112 NXP Semiconductors, BLF6G27-100,112 Datasheet - Page 8

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BLF6G27-100,112

Manufacturer Part Number
BLF6G27-100,112
Description
TRANSISTOR PWR LDMOS SOT502A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G27-100,112

Transistor Type
LDMOS
Frequency
2.5GHz ~ 2.7GHz
Gain
17dB
Voltage - Rated
65V
Current Rating
29A
Current - Test
900mA
Voltage - Test
28V
Power - Output
14W
Package / Case
SOT502A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934064315112
NXP Semiconductors
BLF6G27-100_BLF6G27LS-100
Product data sheet
Fig 7.
(dB)
G
p
19
18
17
16
15
14
2500
V
and 6 traffic channels (Walsh codes 8 to 13);
PAR = 9.7 dB at 0.01 % probability on the CCDF;
channel bandwidth = 1.2288 MHz.
Power gain and drain efficiency as a function
of frequency; typical values
DS
= 28 V; I
G
η
7.5 IS-95 broadband performance at 14 W average power
D
p
2550
Dq
= 900 mA; IS-95 with pilot, paging, sync
2600
2650
All information provided in this document is subject to legal disclaimers.
f (MHz)
001aal785
2700
BLF6G27-100; BLF6G27LS-100
Rev. 02 — 8 July 2010
30
28
26
24
22
20
(%)
η
D
Fig 8.
ACPR
(dBc)
−40
−50
−60
−70
2500
V
and 6 traffic channels (Walsh codes 8 to 13);
PAR = 9.7 dB at 0.01 % probability on the CCDF;
channel bandwidth = 1.2288 MHz.
ACPR at 885 kHz and at 1980 kHz as a function
of frequency; typical values
DS
ACPR
ACPR
= 28 V; I
1980k
855k
2550
Dq
WiMAX power LDMOS transistor
= 900 mA; IS-95 with pilot, paging, sync
2600
2650
© NXP B.V. 2010. All rights reserved.
f (MHz)
001aal786
2700
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