BLF6G10LS-200R,112 NXP Semiconductors, BLF6G10LS-200R,112 Datasheet
BLF6G10LS-200R,112
Specifications of BLF6G10LS-200R,112
BLF6G10LS-200R
BLF6G10LS-200R
Related parts for BLF6G10LS-200R,112
BLF6G10LS-200R,112 Summary of contents
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... BLF6G10LS-200R Power LDMOS transistor Rev. 01 — 21 January 2008 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...
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... RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G10LS-200R - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... Symbol P L(AV IRL D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10LS-200R is an enhanced rugged device and is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G10LS-200R_1 Preliminary data sheet Characteristics Conditions drain-source breakdown V voltage ...
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... G p (dB 1400 mA 881 MHz typical values 001aah519 60 IMD D (dBc) (%) 240 360 P (W) L(PEP) Fig 3. Two-tone CW intermodulation distortion as Rev. 01 — 21 January 2008 BLF6G10LS-200R Power LDMOS transistor 001aah518 60 D (%) 120 160 200 P ( 120 P L(PEP 1400 mA 881 MHz ( 100 kHz function of peak envelope load power; typical ...
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... P (W) L(AV) Fig 5. 2-carrier W-CDMA adjacent channel power ratio C10 Rev. 01 — 21 January 2008 BLF6G10LS-200R Power LDMOS transistor IMD3 ACPR L(AV 1400 mA 881 MHz ( 5 MHz carrier spacing 10 MHz. and third order intermodulation distortion as functions of average load power; typical values C11 C13 C17 ...
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... NXP IN 800 -1000 MHz V1.0 Figure 6 and Figure 7) Value 220 nF 4 1.5 pF 220 9.1 ; 0.1 W Rev. 01 — 21 January 2008 BLF6G10LS-200R Power LDMOS transistor C7 C8 C11 C13 L1 C17 C5 C6 C18 C12 C14 C9 C10 NXP OUT 800 -1000 MHz V1.0 = 3.5 and r Remarks ...
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... REFERENCES JEDEC JEITA Rev. 01 — 21 January 2008 BLF6G10LS-200R Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
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... Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access Release date Data sheet status 20080121 Preliminary data sheet Rev. 01 — 21 January 2008 BLF6G10LS-200R Power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 21 January 2008 BLF6G10LS-200R Power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10LS-200R_1 All rights reserved. Date of release: 21 January 2008 ...