BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet - Page 6

• Manufacturer Part Number: BLF6G38LS-100,112
• Description: IC WIMAX 3.8GHZ 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 3.4GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 34A
• Current - Test: 1.05A
• Voltage - Test: 28V
• Power - Output: 18.5W
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.18 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.9 A
• Power Dissipation: 57.7 W
• Maximum Operating Temperature: + 175 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 130W(Typ)
• Power Gain (typ)@vds: 13@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 12S
• Drain Source Resistance (max): 150@6.15Vmohm
• Reverse Capacitance (typ): 2.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 21.5%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061301112; BLF6G38LS-100; BLF6G38LS-100

NXP Semiconductors
BLF6G38-100_6G38LS-100_1
Product data sheet
Fig 6.
Fig 8.
(dB)
(dB)
G
G
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
P
P
18
16
14
12
10
15
13
11
9
7
10
1
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain and drain efficiency as function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain as a function of load power;
typical values
DS
DS
1
= 28 V; I
= 28 V; I
Dq
Dq
1
= 1050 mA; f = 3500 MHz;
= 1050 mA; single carrier IS-95;
(1)
(2)
(3)
10
10
P
G
L(AV)
D
P
P
(W)
L
001aaj041
001aaj043
(W)
Rev. 01 — 11 November 2008
10
10
BLF6G38-100; BLF6G38LS-100
2
2
40
30
20
10
0
(%)
D
Fig 7.
Fig 9.
ACPR
(dBc)
(W)
P
(1) Low frequency component
(2) High frequency component
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
i
35
45
55
65
75
85
3
2
1
0
10
10
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
Adjacent channel power ratio as a function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Input power as a function of load power;
typical values
ACPR
ACPR
1
DS
1
DS
ACPR
= 28 V; I
= 28 V; I
1500k
1980k
885k
Dq
Dq
WiMAX power LDMOS transistor
1
1
= 1050 mA; f = 3500 MHz;
= 1050 mA; single carrier IS-95;
(1)
(2)
(2)
(1)
(1)
(2)
10
10
(1)
(2)
(3)
P
L(AV)
© NXP B.V. 2008. All rights reserved.
P
L
001aaj042
001aaj045
(W)
(W)
10
10
2
2
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