BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet - Page 6
![IC WIMAX 3.8GHZ 2-LDMOST](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G38LS-100,112
Manufacturer Part Number
BLF6G38LS-100,112
Description
IC WIMAX 3.8GHZ 2-LDMOST
Manufacturer
NXP Semiconductors
Specifications of BLF6G38LS-100,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
3.4GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
34A
Current - Test
1.05A
Voltage - Test
28V
Power - Output
18.5W
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.18 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.9 A
Power Dissipation
57.7 W
Maximum Operating Temperature
+ 175 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
130W(Typ)
Power Gain (typ)@vds
13@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
12S
Drain Source Resistance (max)
150@6.15Vmohm
Reverse Capacitance (typ)
2.6@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
21.5%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934061301112
BLF6G38LS-100
BLF6G38LS-100
BLF6G38LS-100
BLF6G38LS-100
NXP Semiconductors
BLF6G38-100_6G38LS-100_1
Product data sheet
Fig 6.
Fig 8.
(dB)
(dB)
G
G
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
P
P
18
16
14
12
10
15
13
11
9
7
10
1
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain and drain efficiency as function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain as a function of load power;
typical values
DS
DS
1
= 28 V; I
= 28 V; I
Dq
Dq
1
= 1050 mA; f = 3500 MHz;
= 1050 mA; single carrier IS-95;
(1)
(2)
(3)
10
10
P
G
L(AV)
D
P
P
(W)
L
001aaj041
001aaj043
(W)
Rev. 01 — 11 November 2008
10
10
BLF6G38-100; BLF6G38LS-100
2
2
40
30
20
10
0
(%)
D
Fig 7.
Fig 9.
ACPR
(dBc)
(W)
P
(1) Low frequency component
(2) High frequency component
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
i
35
45
55
65
75
85
3
2
1
0
10
10
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
Adjacent channel power ratio as a function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Input power as a function of load power;
typical values
ACPR
ACPR
1
DS
1
DS
ACPR
= 28 V; I
= 28 V; I
1500k
1980k
885k
Dq
Dq
WiMAX power LDMOS transistor
1
1
= 1050 mA; f = 3500 MHz;
= 1050 mA; single carrier IS-95;
(1)
(2)
(2)
(1)
(1)
(2)
10
10
(1)
(2)
(3)
P
L(AV)
© NXP B.V. 2008. All rights reserved.
P
L
001aaj042
001aaj045
(W)
(W)
10
10
2
2
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