BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet

IC WIMAX 3.8GHZ 2-LDMOST

BLF6G38LS-100,112

Manufacturer Part Number
BLF6G38LS-100,112
Description
IC WIMAX 3.8GHZ 2-LDMOST
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BLF6G38LS-100,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
3.4GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
34A
Current - Test
1.05A
Voltage - Test
28V
Power - Output
18.5W
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.18 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.9 A
Power Dissipation
57.7 W
Maximum Operating Temperature
+ 175 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
130W(Typ)
Power Gain (typ)@vds
13@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
12S
Drain Source Resistance (max)
150@6.15Vmohm
Reverse Capacitance (typ)
2.6@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
21.5%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934061301112
BLF6G38LS-100
BLF6G38LS-100
1. Product profile
CAUTION
1.1 General description
1.2 Features
10 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1.
RF performance at T
[1]
[2]
I
I
I
I
I
I
I
I
I
I
Mode of operation
1-carrier N-CDMA
BLF6G38-10; BLF6G38-10G
WiMAX power LDMOS transistor
Rev. 01 — 3 February 2009
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an I
Qualified up to a maximum V
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Dq
of 130 mA:
Typical performance
[1]
case
= 25 C in a class-AB production test circuit.
f
(MHz)
3400 to 3600
DS
operation of 32 V
V
(V)
28
DS
P
(W)
2
L(AV)
G
(dB)
14
p
(%) (dBc)
20
D
ACPR
49
Product data sheet
[2]
885k
ACPR
(dBc)
64
[2]
1980k

Related parts for BLF6G38LS-100,112

BLF6G38LS-100,112 Summary of contents

Page 1

BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. RF performance at ...

Page 2

... NXP Semiconductors 1.3 Applications I RF power amplifiers for base stations and multi carrier applications in the 3400 MHz to 3600 MHz frequency range 2. Pinning information Table 2. Pin BLF6G38-10 (SOT975B BLF6G38-10G (SOT975C [1] Connected to flange. 3. Ordering information Table 3. Type number Package BLF6G38-10 BLF6G38-10G - BLF6G38-10_BLF6G38-10G_1 Product data sheet BLF6G38-10 ...

Page 3

... NXP Semiconductors 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-case) 6. Characteristics Table per section; unless otherwise specified. j Symbol Parameter V (BR)DSS V GS(th) I DSS I DSX I GSS DS(on BLF6G38-10_BLF6G38-10G_1 Product data sheet BLF6G38-10 ...

Page 4

... NXP Semiconductors 7. Application information Table 7. Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR 9 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz 3400 MHz unless otherwise specified class-AB production circuit. case Symbol P L(AV) ...

Page 5

... NXP Semiconductors 7.2.2 Graphs 12 EVM (%) 130 mA 3500 MHz Fig 1. EVM as a function of load power; typical values 130 mA 3500 MHz Fig 3. Adjacent channel power ratio as a function of average load power; typical values BLF6G38-10_BLF6G38-10G_1 Product data sheet BLF6G38-10; BLF6G38-10G 001aaj362 G (dB (W) L Fig 2. ...

Page 6

... NXP Semiconductors 7.3 Single carrier NA IS-95 broadband performance average 7.3.1 Graphs (dB 3400 3450 3500 130 mA; Single Carrier IS-95 PAR = 9 0.01 % probability. Fig 4. Power gain and drain efficiency as function of frequency; typical values (dB 130 mA 3500 MHz single carrier IS-95; PAR = 9 0.01 % probability; channel bandwidth = 1.23 MHz. ...

Page 7

... NXP Semiconductors (dB ( 130 mA; single carrier IS-95 PAR = 9 0.01 % probability; channel bandwidth = 1.23 MHz. ( 3400 MHz ( 3500 MHz ( 3600 MHz Fig 8. Power gain as a function of load power; typical values BLF6G38-10_BLF6G38-10G_1 Product data sheet BLF6G38-10; BLF6G38-10G 001aaj369 0. (W) 0.16 (1) 0.12 0.08 0.04 ...

Page 8

... NXP Semiconductors 8. Test information Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit BLF6G38-10 BLF6G38-10_BLF6G38-10G_1 Product data sheet BLF6G38-10; BLF6G38-10G BLF6G38-10 Input Rev 2 NXP PCB1 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with thickness = 0.76 mm. See Table 9 for list of components. Rev. 01 — ...

Page 9

... NXP Semiconductors Fig 11. Component layout for 3400 MHz to 3600 MHz test circuit BLF6G38-10G Table 9. For test circuit, see Component C1, C3 R1, R2 BLF6G38-10_BLF6G38-10G_1 Product data sheet BLF6G38-10; BLF6G38-10G BLF6G38-10G Input Rev 1 NXP PCB1 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with thickness = 0 ...

Page 10

... NXP Semiconductors Table 10. f (GHz) BLF6G38-10 3.40 3.45 3.50 3.55 3.60 BLF6G38-10G 3.40 3.45 3.50 3.55 3.60 BLF6G38-10_BLF6G38-10G_1 Product data sheet BLF6G38-10; BLF6G38-10G Measured test circuit impedances 12.61 - j23.96 14.16 - j22.23 16.00 - j21.74 17.43 - j22.91 17.11 - j25.43 19.33 - j22.54 21.20 - j21.65 23 ...

Page 11

... NXP Semiconductors 9. Package outline Earless flanged ceramic package; 2 leads A H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 3.63 3.38 0.23 6.55 mm 3.05 3.23 0.18 6.40 0.143 0.133 0.009 0.258 inches 0.120 0.127 0.007 0.252 OUTLINE VERSION IEC SOT975B Fig 12 ...

Page 12

... NXP Semiconductors Earless flanged ceramic package; 2 leads A H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 3.63 3.38 0.23 6.55 mm 3.05 3.23 0.18 6.40 0.143 0.133 0.009 0.258 inches 0.120 0.127 0.007 0.252 OUTLINE VERSION IEC SOT975C Fig 13. Package outline SOT975C ...

Page 13

... NXP Semiconductors 10. Abbreviations Table 11. Acronym CCDF CW EVM FCH FFT IBW IS-95 LDMOS NA N-CDMA PAR PUSC RF SMD VSWR WCS WiMAX 11. Revision history Table 12. Revision history Document ID BLF6G38-10_BLF6G38-10G_1 BLF6G38-10_BLF6G38-10G_1 Product data sheet BLF6G38-10; BLF6G38-10G Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Error Vector Magnitude ...

Page 14

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 15

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation 7.2 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 7.2.1 WiMAX signal description . . . . . . . . . . . . . . . . . 4 7.2.2 Graphs ...

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