BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet - Page 10

IC WIMAX 3.8GHZ 2-LDMOST

BLF6G38LS-100,112

Manufacturer Part Number
BLF6G38LS-100,112
Description
IC WIMAX 3.8GHZ 2-LDMOST
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BLF6G38LS-100,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
3.4GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
34A
Current - Test
1.05A
Voltage - Test
28V
Power - Output
18.5W
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.18 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.9 A
Power Dissipation
57.7 W
Maximum Operating Temperature
+ 175 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
130W(Typ)
Power Gain (typ)@vds
13@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
12S
Drain Source Resistance (max)
150@6.15Vmohm
Reverse Capacitance (typ)
2.6@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
21.5%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934061301112
BLF6G38LS-100
BLF6G38LS-100
NXP Semiconductors
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Table 10.
f
(GHz)
BLF6G38-10
3.40
3.45
3.50
3.55
3.60
BLF6G38-10G
3.40
3.45
3.50
3.55
3.60
Measured test circuit impedances
Rev. 01 — 3 February 2009
BLF6G38-10; BLF6G38-10G
Z
( )
12.61 - j23.96
14.16 - j22.23
16.00 - j21.74
17.43 - j22.91
17.11 - j25.43
19.33 - j22.54
21.20 - j21.65
23.02 - j22.41
23.70 - j24.95
21.98 - j28.26
i
WiMAX power LDMOS transistor
Z
( )
5.21 - j6.31
5.47 - j6.01
5.72 - j5.87
5.90 - j5.91
5.92 - j6.09
4.71 - j7.09
4.75 - j6.82
4.72 - j6.65
4.60 - j6.55
4.36 - j6.47
o
© NXP B.V. 2009. All rights reserved.
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