BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet - Page 3
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BLF6G38LS-100,112
Manufacturer Part Number
BLF6G38LS-100,112
Description
IC WIMAX 3.8GHZ 2-LDMOST
Manufacturer
NXP Semiconductors
Specifications of BLF6G38LS-100,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
3.4GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
34A
Current - Test
1.05A
Voltage - Test
28V
Power - Output
18.5W
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.18 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.9 A
Power Dissipation
57.7 W
Maximum Operating Temperature
+ 175 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
130W(Typ)
Power Gain (typ)@vds
13@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
12S
Drain Source Resistance (max)
150@6.15Vmohm
Reverse Capacitance (typ)
2.6@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
21.5%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934061301112
BLF6G38LS-100
BLF6G38LS-100
BLF6G38LS-100
BLF6G38LS-100
NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Table 6.
T
Symbol
V
V
I
T
T
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
C
D
DSS
DSX
GSS
j
fs
stg
j
DS
GS
(BR)DSS
GS(th)
th(j-case)
DS(on)
rs
= 25 C per section; unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Limiting values
Thermal characteristics
Characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Parameter
thermal resistance from
junction to case
Rev. 01 — 3 February 2009
BLF6G38-10; BLF6G38-10G
Conditions
T
P
Conditions
case
L
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 10 W (CW)
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
= 0.6 A
= 80 C;
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
D
D
= 0.18 mA
+ 3.75 V;
+ 3.75 V;
DS
= 18 mA
= 0.9 A
Type
BLF6G38-10
BLF6G38-10G
= 28 V
= 28 V;
= 0 V
WiMAX power LDMOS transistor
Min
65
1.4
-
2.7
-
0.8
328
-
Min
-
-
-
Typ
-
1.9
-
-
-
-
-
3.6
© NXP B.V. 2009. All rights reserved.
0.5
65
Typ
4.0
4.0
Max
65
+13
3.1
+150
200
Max
-
2.4
1.4
-
140
-
1256
-
Unit
K/W
K/W
3 of 15
Unit
V
V
A
Unit
V
V
A
nA
S
m
pF
C
C
A