BLA1011S-200,112 NXP Semiconductors, BLA1011S-200,112 Datasheet - Page 6

• Manufacturer Part Number: BLA1011S-200,112
• Description: TRANS LDMOS NCH 75V SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLA1011S-200,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz
• Gain: 13dB
• Voltage - Rated: 75V
• Current Rating: 1µA
• Current - Test: 150mA
• Voltage - Test: 36V
• Power - Output: 200W
• Package / Case: SOT502B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 934058889112; BLA1011S-200; BLA1011S-200

Philips Semiconductors
8. Test information
9397 750 14634
Product data sheet
Fig 8. Component layout for 1030 MHz to 1090 MHz test circuit
Dimensions in mm.
The components are situated on one side of the copper-clad Duroid Printed-Circuit Board (PCB) with
0.64 mm.
The other side is unetched and serves as a ground plane.
See
Table 8
for list of components.
C1
C5
C3
C6
40
+
C2
R2
R1
C4
Rev. 08 — 26 October 2005
BLA1011-200; BLA1011S-200
C9
40
L1
C8
C10
C11
mgw032
C7
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Avionics LDMOS transistor
60
r
= 6.2 and thickness
6 of 13