PD54003S-E STMicroelectronics, PD54003S-E Datasheet - Page 4

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PD54003S-E

Manufacturer Part Number
PD54003S-E
Description
TRANS RF N-CH FET POWERSO-10RF
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD54003S-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
12dB
Voltage - Rated
25V
Current Rating
4A
Current - Test
50mA
Voltage - Test
7.5V
Power - Output
3W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
4A
Drain Source Voltage (max)
25V
Output Power (max)
3W(Min)
Power Gain (typ)@vds
12dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
1.7S
Input Capacitance (typ)@vds
59@7.5VpF
Output Capacitance (typ)@vds
43@7.5VpF
Reverse Capacitance (typ)
4@7.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
52800mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Electrical characteristics
2
2.1
2.2
2.3
4/27
Electrical characteristics
T
Static
Table 4.
Dynamic
Table 5.
Moisture sensitivity level
Table 6.
mismatch
CASE
Symbol
Symbol
V
V
P
C
C
Load
DS(ON)
I
C
G
I
GS(Q)
g
GSS
DSS
n
OUT
OSS
RSS
ISS
FS
PS
D
= +25
V
V
V
V
All phase angles
V
V
V
V
V
V
V
V
Static
Dynamic
Moisture sensitivity level
DD
DD
DD
DD
o
GS
GS
DS
GS
DS
GS
GS
GS
C
= 7.5 V, I
= 7.5 V, I
= 7.5 V, I
= 9.5 V, I
= 0
= 20 V
= 10 V
= 10 V
= 10 V
= 0
= 0
= 0
DQ
DQ
DQ
DQ
= 50 mA
= 50 mA, P
= 50 mA, P
= 50 mA, P
V
V
V
V
Test conditions
Test methodology
Test conditions
Doc ID 12235 Rev 2
DS
DS
DS
DS
V
I
I
I
D
D
D
J-STD-020B
DS
= 25 V
= 7.5 V
= 7.5 V
= 7.5 V
= 1 A
= 3.2 A
= 50 mA
= 0
OUT
OUT
OUT
= 3 W, f = 500 MHz
= 3 W, f = 500 MHz
= 3 W, f = 500 MHz
f = 500 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min.
20:1
Min.
PD54003-E, PD54003S-E
2.0
10
50
3
Typ.
Typ.
12
55
1.7
4.0
59
43
Max.
Max.
5.0
1.3
1
1
Rating
MSL 3
VSWR
Unit
Unit
mho
dB
µA
µA
W
pF
pF
pF
%
V
V

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