PD54003S-E STMicroelectronics, PD54003S-E Datasheet - Page 5

no-image

PD54003S-E

Manufacturer Part Number
PD54003S-E
Description
TRANS RF N-CH FET POWERSO-10RF
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD54003S-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
12dB
Voltage - Rated
25V
Current Rating
4A
Current - Test
50mA
Voltage - Test
7.5V
Power - Output
3W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
4A
Drain Source Voltage (max)
25V
Output Power (max)
3W(Min)
Power Gain (typ)@vds
12dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
1.7S
Input Capacitance (typ)@vds
59@7.5VpF
Output Capacitance (typ)@vds
43@7.5VpF
Reverse Capacitance (typ)
4@7.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
52800mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
PD54003-E, PD54003S-E
3
Impedance
Figure 2.
Table 7.
Freq. (MHz)
480
500
520
Current conventions
Impedance data
2.245 - j 0.077 3.436 + j 1.013
1.553 - j 1.251 2.661 + j 0.139
1.993 - j 1.098 2.564 + j 0.656
PD54003-E
Z
IN
(Ω)
Doc ID 12235 Rev 2
Z
DL
(Ω)
Freq. (MHz)
480
500
520
1.400 - j 3.986 2.805 + j 2.724
1.209 - j 2.451 3.192 + j 3.147
1.534 - j 2.104 2.524 + j 2.369
PD54003S-E
Z
IN
(Ω)
Impedance
Z
DL
(Ω)
5/27

Related parts for PD54003S-E