MRF1535FNT1 Freescale Semiconductor, MRF1535FNT1 Datasheet

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MRF1535FNT1

Manufacturer Part Number
MRF1535FNT1
Description
IC MOSFET RF N-CHAN TO272-6
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF1535FNT1

Transistor Type
N-Channel
Frequency
520MHz
Gain
13.5dB
Voltage - Rated
40V
Current Rating
6A
Current - Test
500mA
Voltage - Test
12.5V
Power - Output
35W
Package / Case
TO-272-6
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
6A
Drain Source Voltage (max)
40V
Output Power (max)
35W
Power Gain (typ)@vds
13.5dB
Frequency (min)
135MHz
Frequency (max)
520MHz
Package Type
TO-272 EP
Pin Count
6
Drain Source Resistance (max)
700@5Vmohm
Input Capacitance (typ)@vds
250(Max)@12.5VpF
Output Capacitance (typ)@vds
150(Max)@12.5VpF
Reverse Capacitance (typ)
20(Max)@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
135000mW
Vswr (max)
20
Screening Level
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF1535FNT1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF1535FNT1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband - Full Power Across the Band: 135 - 175 MHz
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
1. Calculated based on the formula P
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications with frequen-
Derate above 25°C
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 35 Watts
Power Gain — 13.5 dB
Efficiency — 55%
Test Methodology
C
= 25°C
Characteristic
Rating
D
(1)
=
T J – T C
R θJC
400 - 470 MHz
450 - 520 MHz
Rating
3
Symbol
Symbol
V
R
V
T
Package Peak Temperature
P
T
DSS
I
θJC
GS
stg
D
D
J
CASE 1264A - 03, STYLE 1
CASE 1264 - 10, STYLE 1
Document Number: MRF1535N
TO - 272 - 6 WRAP
MRF1535FNT1
260
MRF1535NT1
MRF1535FNT1
LATERAL N - CHANNEL
MRF1535NT1
520 MHz, 35 W, 12.5 V
RF POWER MOSFETs
PLASTIC
TO - 272 - 6
PLASTIC
MRF1535NT1 MRF1535FNT1
- 65 to +150
BROADBAND
- 0.5, +40
Value
Value
0.50
0.90
± 20
135
200
6
(2)
Rev. 13, 6/2009
W/°C
°C/W
Unit
Unit
Unit
Vdc
Vdc
Adc
°C
°C
°C
W
1

Related parts for MRF1535FNT1

MRF1535FNT1 Summary of contents

Page 1

... PLASTIC MRF1535NT1 CASE 1264A - 03, STYLE 272 - 6 PLASTIC MRF1535FNT1 Symbol Value V - 0.5, +40 DSS V ± 135 D 0. +150 stg T 200 J (2) Symbol Value R 0.90 θJC Package Peak Temperature 260 MRF1535NT1 MRF1535FNT1 Unit Vdc Vdc Adc W W/°C °C °C Unit °C/W Unit °C 1 ...

Page 2

... RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (V = 12.5 Vdc Watts 500 mA) DD out DQ Drain Efficiency (V = 12.5 Vdc Watts 500 mA) DD out DQ MRF1535NT1 MRF1535FNT1 2 = 25°C unless otherwise noted) Symbol 520 MHz f = 520 MHz Min Typ Max 60 — — (BR)DSS I — — ...

Page 3

... Microstrip 0.250″ x 0.080″ Microstrip 0.320″ x 0.080″ Microstrip 0.240″ x 0.080″ Microstrip ® Glass Teflon , 31 mils 155 MHz 135 MHz 175 MHz V = 12.5 Vdc OUTPUT POWER (WATTS) out MRF1535NT1 MRF1535FNT1 RF OUTPUT N2 C20 C19 60 3 ...

Page 4

... I , BIASING CURRENT (mA) DQ Figure 6. Output Power versus Biasing Current 175 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 8. Output Power versus Supply Voltage MRF1535NT1 MRF1535FNT1 12.5 Vdc 155 MHz 135 MHz Figure 5. Drain Efficiency versus Output Power 12.5 Vdc DD P ...

Page 5

... Microstrip 0.120″ x 0.223″ Microstrip 1.380″ x 0.080″ Microstrip 0.625″ x 0.080″ Microstrip ® Glass Teflon , 31 mils V = 12.5 Vdc DD 450 MHz 470 MHz 520 MHz 500 MHz OUTPUT POWER (WATTS) out MRF1535NT1 MRF1535FNT1 V DD C22 RF OUTPUT 60 5 ...

Page 6

... BIASING CURRENT (mA) DQ Figure 15. Output Power versus Biasing Current 450 MHz 40 470 MHz 30 500 MHz 520 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 17. Output Power versus Supply Voltage MRF1535NT1 MRF1535FNT1 12.5 Vdc 500 MHz Figure 14. Drain Efficiency versus Output Power 80 70 520 MHz 60 ...

Page 7

... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D 190 200 210 2 MRF1535NT1 MRF1535FNT1 7 ...

Page 8

... Z = Complex conjugate of source in impedance Complex conjugate of the load OL impedance at given output power, voltage, frequency, and η Note was chosen based on tradeoffs between gain, drain efficiency, and device stability. OL Figure 20. Series Equivalent Input and Output Impedance MRF1535NT1 MRF1535FNT1 135 MHz = 12 out Ω ...

Page 9

... S 22 ∠ φ ∠ φ 0.89 - 177 4 0.89 - 177 7 0.89 - 177 17 0.90 - 176 40 0.90 - 175 35 0.91 - 175 57 0.92 - 174 50 0.93 - 173 68 0.93 - 173 99 0.94 - 173 78 0.93 - 175 92 0.92 - 174 MRF1535NT1 MRF1535FNT1 9 ...

Page 10

... One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance the linear region of the output characteristic and is speci- fied at a specific gate - source voltage and drain current. The MRF1535NT1 MRF1535FNT1 10 APPLICATIONS INFORMATION drain - source voltage under these conditions is termed V ...

Page 11

... Two - port stability analysis with this device’ parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Free- scale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. MRF1535NT1 MRF1535FNT1 11 ...

Page 12

... MRF1535NT1 MRF1535FNT1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF1535NT1 MRF1535FNT1 13 ...

Page 14

... MRF1535NT1 MRF1535FNT1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF1535NT1 MRF1535FNT1 15 ...

Page 16

... MRF1535NT1 MRF1535FNT1 16 RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MRF1535NT1 MRF1535FNT1 17 ...

Page 18

... Added AN1907, Solder Reflow Attach Method for High Power RF Devices in Plastic Packages and AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to Product Documentation, Application Notes • Added Electromigration MTTF Calculator availability to Product Software MRF1535NT1 MRF1535FNT1 18 REVISION HISTORY Description ...

Page 19

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008-2009. All rights reserved. MRF1535NT1 MRF1535FNT1 19 ...

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