MRF1535FNT1 Freescale Semiconductor, MRF1535FNT1 Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/2/262/freescale_semiconductor_sml.jpg)
MRF1535FNT1
Manufacturer Part Number
MRF1535FNT1
Description
IC MOSFET RF N-CHAN TO272-6
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF1535NT1.pdf
(19 pages)
Specifications of MRF1535FNT1
Transistor Type
N-Channel
Frequency
520MHz
Gain
13.5dB
Voltage - Rated
40V
Current Rating
6A
Current - Test
500mA
Voltage - Test
12.5V
Power - Output
35W
Package / Case
TO-272-6
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
6A
Drain Source Voltage (max)
40V
Output Power (max)
35W
Power Gain (typ)@vds
13.5dB
Frequency (min)
135MHz
Frequency (max)
520MHz
Package Type
TO-272 EP
Pin Count
6
Drain Source Resistance (max)
700@5Vmohm
Input Capacitance (typ)@vds
250(Max)@12.5VpF
Output Capacitance (typ)@vds
150(Max)@12.5VpF
Reverse Capacitance (typ)
20(Max)@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
135000mW
Vswr (max)
20
Screening Level
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF1535FNT1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF1535FNT1
Manufacturer:
FREESCALE
Quantity:
20 000
MRF1535NT1 MRF1535FNT1
8
f = 450 MHz
f = 175 MHz
Z
Z
in
OL
Z
Note: Z
* = Complex conjugate of the load
OL
V
MHz
Z
135
155
175
= Complex conjugate of source
*
DD
OL
f
Z
= 12.5 V, I
*
impedance.
impedance at given output power,
voltage, frequency, and η
in
OL
f = 135 MHz
f = 520 MHz
f = 520 MHz
f = 450 MHz
Z
* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
o
Figure 20. Series Equivalent Input and Output Impedance
= 10 Ω
5.0 + j0.9
5.0 + j0.9
3.0 + j1.0
DQ
Z
= 250 mA, P
Ω
in
f = 175 MHz
Input
Matching
Network
out
1.7 + j0.2
1.7 + j0.2
1.3 + j0.1
Z
= 35 W
f = 135 MHz
Z
OL
Ω
D
in
Z
*
> 50 %.
in
Device
Under Test
Z
Z
in
OL
Z
OL
* = Complex conjugate of the load
V
MHz
*
450
470
500
520
= Complex conjugate of source
DD
f
= 12.5 V, I
impedance.
impedance at given output power,
voltage, frequency, and η
Output
Matching
Network
0.8 - j1.4
0.9 - j1.4
1.0 - j1.4
0.9 - j1.4
DQ
Z
= 500 mA, P
Ω
in
out
1.0 - j0.8
1.1 - j0.6
1.1 - j0.6
1.1 - j0.5
Z
= 35 W
OL
Ω
D
*
> 50 %.
Freescale Semiconductor
RF Device Data