MRF6S21050LR3 Freescale Semiconductor, MRF6S21050LR3 Datasheet - Page 5

• Manufacturer Part Number: MRF6S21050LR3
• Description: MOSFET RF N-CH 28V 11.5W NI-400
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S21050LR3

• Transistor Type: N-Channel
• Frequency: 2.16GHz
• Gain: 16dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 11.5W
• Package / Case: NI-400
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
17.5
16.5
15.5
14.5
13.5
17
16
15
14
0.1
Figure 5. Two - Tone Power Gain versus
I
DQ
225 mA
= 675 mA
560 mA
450 mA
335 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P
1
Output Power
V
f2 = 2145 MHz, Two−Tone
Measurements, 10 MHz Tone Spacing
DD
16.4
16.3
16.2
16.1
15.9
15.8
15.7
15.6
15.5
15.4
15.9
15.8
15.7
15.6
15.5
15.4
15.3
15.2
15.1
16
16
15
= 28 Vdc, f1 = 2135 MHz
2100
2100
V
I
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
IM3
V
I
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
IM3
DQ
ACPR
DQ
DD
DD
ACPR
2110
2110
= 450 mA, 2−Carrier W−CDMA
= 450 mA, 2−Carrier W−CDMA
= 28 Vdc, P
= 28 Vdc, P
10
2120
2120
TYPICAL CHARACTERISTICS
out
out
2130
2130
= 11.5 W (Avg.)
= 23 W (Avg.)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
2140
2140
100
2150
2150
2160
2160
−10
−20
−30
−40
−50
−60
IRL
2170 2180
2170 2180
0.1
Figure 6. Third Order Intermodulation Distortion
V
Two−Tone Measurements, 10 MHz Tone Spacing
DD
G
I
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
DQ
ps
G
IRL
η
η
ps
D
= 225 mA
D
2190
2190
P
out
out
2200
2200
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
MRF6S21050LR3 MRF6S21050LSR3
30
28
26
24
22
−32
−34
−36
−38
−40
−42
= 11.5 Watts
41
40
39
38
37
−24
−26
−28
−30
−32
−34
= 23 Watts
1
675 mA
450 mA
−10
−20
−30
−40
−50
−60
−10
−15
−20
−25
−30
−35
10
560 mA
335 mA
100
5