MRF6S21050LR3 Freescale Semiconductor, MRF6S21050LR3 Datasheet

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MRF6S21050LR3

Manufacturer Part Number
MRF6S21050LR3
Description
MOSFET RF N-CH 28V 11.5W NI-400
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S21050LR3

Transistor Type
N-Channel
Frequency
2.16GHz
Gain
16dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
450mA
Voltage - Test
28V
Power - Output
11.5W
Package / Case
NI-400
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

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Price
Part Number:
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© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Freescale Semiconductor
Technical Data
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W - CDMA base station applications with frequencies from 2110
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Case Temperature 80°C, 50 W CW
Case Temperature 76°C, 12 W CW
out
Power Gain — 16 dB
Drain Efficiency — 27.7%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 11.5 Watts Avg., f = 2157 MHz, Channel Bandwidth = 3.84 MHz,
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 450 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
Document Number: MRF6S21050L
2110 - 2170 MHz, 11.5 W AVG., 28 V
CASE 465F - 04, STYLE 1
MRF6S21050LR3 MRF6S21050LSR3
CASE 465E - 04, STYLE 1
MRF6S21050LSR3
MRF6S21050LSR3
MRF6S21050LR3
MRF6S21050LR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 400S
NI - 400
- 65 to +150
2 x W - CDMA
Value
- 0.5, +68
- 0.5, +12
Value
1.16
1.28
150
225
(2,3)
Rev. 2, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

Related parts for MRF6S21050LR3

MRF6S21050LR3 Summary of contents

Page 1

... MHz, 11.5 W AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 400 MRF6S21050LR3 CASE 465F - 04, STYLE 400S MRF6S21050LSR3 Symbol Value Unit V - 0.5, +68 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 1.16 1.28 MRF6S21050LR3 MRF6S21050LSR3 1 ...

Page 2

... W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S21050LR3 MRF6S21050LSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... Z3 0.435″ x 0.173″ Microstrip Z4 0.073″ x 0.333″ Microstrip Z5 0.070″ x 0.333″ Microstrip Figure 1. MRF6S21050LR3(LSR3) Test Circuit Schematic Table 5. MRF6S21050LR3(LSR3) Test Circuit Component Designations and Values Part B1 Bead, Surface Mount C1, C2, C3, C8 6.8 pF Chip Capacitors C4 0.01 μF Chip Capacitor C5, C11 2.2 μ ...

Page 4

... bottom top. Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout MRF6S21050LR3 MRF6S21050LSR3 4 C3 C4, C5* C13 C11 C12 C10 C8 C9 C14 C2 MRF6S21050L Rev Device Data Freescale Semiconductor ...

Page 5

... Watts out 41 η −24 −10 −26 −15 −20 −28 −25 −30 −32 −30 −34 −35 2190 2200 = 23 Watts out = 28 Vdc 2135 MHz 2145 MHz 675 225 mA DQ 560 mA 450 OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S21050LR3 MRF6S21050LSR3 335 mA 100 5 ...

Page 6

... G ps 15 13.5 DQ η 2140 MHz OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21050LR3 MRF6S21050LSR3 6 TYPICAL CHARACTERISTICS P1dB = 47.89 dBm (61. 100 28 Figure 8. Pulsed CW Output Power versus Vdc 450 mA 2135 MHz 2145 MHz W−CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8 ...

Page 7

... D 3.84 MHz Channel BW −ACPR in +ACPR in −IM3 in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW 3.84 MHz BW −20 −15 −10 − FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21050LR3 MRF6S21050LSR3 ...

Page 8

... MHz Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S21050LR3 MRF6S21050LSR3 Ω load f = 2080 MHz 2200 MHz source f = 2080 MHz Vdc 450 mA 11.5 W Avg out source load MHz Ω Ω 2080 4.09 - j14.65 2.36 - j7.52 2090 3.74 - j13.95 2.25 - j7.11 2100 3 ...

Page 9

... M .395 .405 10.03 10.29 N .395 .405 10.03 10.29 R .395 .405 10.03 10.29 S .395 .405 10.03 10.29 aaa .005 REF 0.127 REF bbb .010 REF 0.254 REF ccc .015 REF 0.38 REF M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF6S21050LR3 MRF6S21050LSR3 9 ...

Page 10

... Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations • Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device • Added Product Documentation and Revision History MRF6S21050LR3 MRF6S21050LSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY Description ...

Page 11

... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2006, 2008. All rights reserved. MRF6S21050LR3 MRF6S21050LSR3 11 ...

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