MRF8S9100HSR3 Freescale Semiconductor, MRF8S9100HSR3 Datasheet - Page 2

• Manufacturer Part Number: MRF8S9100HSR3
• Description: MOSFET RF N-CH 100W NI-780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9100HSR3

• Transistor Type: N-Channel
• Frequency: 920MHz
• Gain: 19.3dB
• Voltage - Rated: 70V
• Current Rating: 10µA
• Current - Test: 500mA
• Voltage - Test: 28V
• Power - Output: 72W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

2
MRF8S9100HR3 MRF8S9100HSR3
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Input Return Loss
P
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Part internally input matched.
out
Case Temperature 80°C, 100 W CW, 28 Vdc, I
Case Temperature 81°C, 72 W CW, 28 Vdc, I
Case Temperature 82°C, 45 W CW, 28 Vdc, I
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes -- AN1955.
DS
DS
GS
DS
DD
GS
@ 1 dB Compression Point, CW
= 70 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(3)
DS
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 460 μAdc)
= 500 mAdc, Measured in Functional Test)
= 1.7 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Characteristic
Frequency
Test Methodology
920 MHz
940 MHz
960 MHz
Characteristic
(T
A
= 25°C unless otherwise noted)
DQ
DQ
DQ
= 500 mA
= 700 mA
= 500 mA
DD
= 28 Vdc, I
Symbol
V
V
V
P1dB
DD
I
I
I
DS(on)
DQ
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
η
ps
D
= 28 Vdc, I
= 500 mA, P
(dB)
19.3
19.3
19.1
G
ps
Symbol
R
Min
100
DQ
1.4
2.1
0.1
18
50
—
—
—
—
θJC
out
= 500 mA, P
= 72 W CW, f = 920 MHz
--12.4
0.17
19.3
51.6
Typ
2.2
2.9
—
—
—
—
IV (Minimum)
A (Minimum)
2 (Minimum)
51.6
52.9
54.1
(%)
out
η
Value
D
Class
Freescale Semiconductor
0.60
0.65
0.69
= 72 W CW
(1,2)
Max
2.9
3.6
0.3
10
23
—
--9
—
1
1
RF Device Data
--12.4
--14.3
--12.2
(dB)
IRL
(continued)
°C/W
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dB
dB
W
%