MRF8S9100HSR3 Freescale Semiconductor, MRF8S9100HSR3 Datasheet - Page 6

• Manufacturer Part Number: MRF8S9100HSR3
• Description: MOSFET RF N-CH 100W NI-780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9100HSR3

• Transistor Type: N-Channel
• Frequency: 920MHz
• Gain: 19.3dB
• Voltage - Rated: 70V
• Current Rating: 10µA
• Current - Test: 500mA
• Voltage - Test: 28V
• Power - Output: 72W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

6
MRF8S9100HR3 MRF8S9100HSR3
6
5
4
3
2
1
0
--50
--55
--60
--65
--70
--75
--80
800
0
V
EDGE Modulation
DD
820 840
V
EDGE Modulation
Figure 8. Spectral Regrowth at 600 kHz
= 28 Vdc, I
DD
10
Figure 6. EVM versus Frequency
= 28 Vdc, I
20
DQ
860
P
P
versus Output Power
out
out
= 700 mA
DQ
30
f, FREQUENCY (MHz)
= 64 W Avg.
, OUTPUT POWER (WATTS)
= 700 mA
14 W Avg.
880
45 W Avg.
40
900
50
--10
--15
920
25
20
15
10
--5
940 MHz
5
0
500
60
940
Figure 10. Broadband Frequency Response
70
600
f = 960 MHz
TYPICAL CHARACTERISTICS
960
80
920 MHz
980
700
90
IRL
1000
f, FREQUENCY (MHz)
100
800
Gain
10
900
8
6
4
2
0
1
--40
--45
--50
--55
--60
--65
--70
V
EDGE Modulation
Figure 9. EVM and Drain Efficiency versus
DD
0
1000
= 28 Vdc, I
V
EDGE Modulation
V
P
I
DD
DQ
Figure 7. Spectral Regrowth at 400 kHz
DD
in
10
= 28 Vdc, I
= 0 dBm
= 500 mA
= 28 Vdc
P
1100
out
20
DQ
, OUTPUT POWER (WATTS) AVG.
= 700 mA
P
DQ
versus Output Power
Output Power
out
30
1200
= 700 mA
, OUTPUT POWER (WATTS)
15
10
5
0
--5
--10
--15
--20
--25
40
10
η
EVM
D
50
940 MHz
Freescale Semiconductor
960 MHz
f = 960 MHz
60
f = 960 MHz
920 MHz
70
RF Device Data
940 MHz
940 MHz
920 MHz
920 MHz
80
100
90
75
60
45
30
0
15
100