MRF6V2300NR1 Freescale Semiconductor, MRF6V2300NR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6V2300NR1
• Description: MOSFET RF N-CH TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2300NR1

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 25.5dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 31.4dB
• Frequency (min): 10MHz
• Frequency (max): 600MHz
• Package Type: TO-270 WB EP
• Pin Count: 5
• Input Capacitance (typ)@vds: 268@50VpF
• Output Capacitance (typ)@vds: 120@50VpF
• Reverse Capacitance (typ): 2.88@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 61.5%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

2
MRF6V2300NR1 MRF6V2300NBR1
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Typical Performances (In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) V
Per JESD22--A113, IPC/JEDEC J--STD--020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Drain--Source Breakdown Voltage
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
Power Gain
Drain Efficiency
Input Return Loss
(V
(V
(I
(V
(V
(V
(V
(V
(V
(V
D
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 150 mA, V
= 100 Vdc, V
= 50 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
GS
DS
D
D
D
GS
GS
= 800 μAdc)
= 900 mAdc, Measured in Functional Test)
= 2 Adc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
Test Methodology
ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
Characteristic
(T
A
f = 27 MHz
f = 450 MHz
f = 27 MHz
f = 450 MHz
f = 27 MHz
f = 450 MHz
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
V
Symbol
V
Rating
V
V
(BR)DSS
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
G
= 900 mA, P
IRL
IRL
DSS
DSS
GSS
η
η
3
oss
rss
iss
ps
ps
D
D
DD
out
Min
110
Package Peak Temperature
1.5
24
66
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
= 50 Vdc, I
= 300 W, f = 220 MHz, CW
--17.4
--24.4
DQ
1.63
0.28
2.88
25.5
31.4
21.7
61.5
59.1
260
Typ
120
268
--16
2.6
68
—
—
—
—
= 900 mA, P
Freescale Semiconductor
Max
2.5
3.5
50
10
27
—
—
—
—
—
—
--9
—
—
—
—
—
—
3
out
RF Device Data
= 300 W CW
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
mA
dB
dB
dB
dB
°C
pF
pF
pF
%
%