MRFE6S9130HR3 Freescale Semiconductor, MRFE6S9130HR3 Datasheet
MRFE6S9130HR3
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MRFE6S9130HR3 Summary of contents
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... SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRFE6S9130HR3 CASE 465A - 06, STYLE 780S MRFE6S9130HSR3 Symbol Value Unit V - 0.5, +66 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.45 0.51 MRFE6S9130HR3 MRFE6S9130HSR3 1 ...
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... Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. MRFE6S9130HR3 MRFE6S9130HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...
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... Microstrip Z5 0.173″ x 0.220″ Microstrip Z6, Z11 0.200″ x 0.220″ x 0.620″ Taper Figure 1. MRFE6S9130HR3(SR3) Test Circuit Schematic Table 5. MRFE6S9130HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 Ferrite Beads, Short C1, C13, C14 47 pF Chip Capacitors C2 8 ...
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... C7 C1 Figure 2. MRFE6S9130HR3(SR3) Test Circuit Component Layout MRFE6S9130HR3 MRFE6S9130HSR3 4 B2 900 MHz Rev C10 C19 C16 C17 C18 C15 C14 C13 C12 C11 RF Device Data Freescale Semiconductor ...
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... Watts Avg. out = 28 Vdc 878.75 MHz 881.25 MHz I = 500 mA DQ 700 mA 1400 mA 1100 mA 950 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRFE6S9130HR3 MRFE6S9130HSR3 400 5 ...
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... IM5−L IM5−U IM7−U −50 IM7−L − TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power MRFE6S9130HR3 MRFE6S9130HSR3 6 TYPICAL CHARACTERISTICS P3dB = 52.26 dBm (168. P1dB = 51.15 dBm 54 (130.31 W) ...
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... Integrated BW −2.2 −1.5 −0.7 0 0.7 1.5 2.2 f, FREQUENCY (MHz) MRFE6S9130HR3 MRFE6S9130HSR3 230 250 . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... Figure 15. Series Equivalent Source and Load Impedance MRFE6S9130HR3 MRFE6S9130HSR3 910 MHz Z load f = 850 MHz = 2 Ω 910 MHz Z source f = 850 MHz Vdc 950 mA Avg out source load MHz Ω Ω 850 0.89 - j1.18 1.50 - j0.09 865 0.87 - j1.03 1.52 + j0.11 880 0.85 - j0.89 1 ...
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... REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRFE6S9130HR3 MRFE6S9130HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 9 ...
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... Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added • Corrected V • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic MRFE6S9130HR3 MRFE6S9130HSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY ...
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... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007, 2008. All rights reserved. MRFE6S9130HR3 MRFE6S9130HSR3 11 ...