MRFE6S9130HR3 Freescale Semiconductor, MRFE6S9130HR3 Datasheet - Page 5

• Manufacturer Part Number: MRFE6S9130HR3
• Description: MOSFET RF N-CH 27W NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9130HR3

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 19.2dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 27W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
21
20
19
18
17
16
15
1
500 mA
1100 mA
950 mA
700 mA
I
DQ
Figure 5. Two - Tone Power Gain versus
= 1400 mA
V
Two−Tone Measurements, 2.5 MHz Tone Spacing
DD
P
= 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
out
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
, OUTPUT POWER (WATTS) PEP
Output Power
10
19.5
18.5
17.5
16.5
15.5
18.5
17.5
16.5
15.5
14.5
13.5
20
19
18
17
16
15
19
18
17
16
15
14
13
820
820
η
G
ALT1
ACPR
ACPR
D
ps
ALT1
840
840
IRL
V
I
Paging, Traffic Codes 8 Through 13
DQ
860
860
DD
V
N−CDMA IS−95 Pilot, Sync, Paging, Traffic
Codes 8 Through 13
100
TYPICAL CHARACTERISTICS
DD
= 950 mA, N−CDMA IS−95 Pilot, Sync
= 28 Vdc, P
G
ps
= 28 Vdc, P
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
880
880
IRL
out
900
out
900
400
= 54 W (Avg.)
η
= 27 W (Avg.), I
D
920
920
940
940
−10
−20
−30
−40
−50
−60
DQ
1
= 950 mA
Figure 6. Third Order Intermodulation Distortion
V
Two−Tone Measurements, 2.5 MHz Tone Spacing
960
960
DD
= 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
980
980
P
34
32
30
28
26
−20
−30
−40
−50
−60
50
47
44
41
38
35
−10
−20
−30
−40
−50
−60
−70
−70
950 mA
out
MRFE6S9130HR3 MRFE6S9130HSR3
out
out
, OUTPUT POWER (WATTS) PEP
versus Output Power
= 27 Watts Avg.
= 54 Watts Avg.
10
I
700 mA
DQ
0
−5
−10
−15
−20
−25
−30
−5
−15
−25
−35
−45
−55
= 500 mA
1400 mA
1100 mA
100
400
5