MRF8S9200NR3 Freescale Semiconductor, MRF8S9200NR3 Datasheet
MRF8S9200NR3
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MRF8S9200NR3 Summary of contents
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... SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFET CASE 2021- -03, STYLE 1 OM- -780- -2 PLASTIC Symbol Value Unit V --0.5, +70 Vdc DSS V --6.0, +10 Vdc GS V 32, +0 Vdc DD T --65 to +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.30 0.25 MRF8S9200NR3 1 ...
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... Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz 1. Part internally matched both on input and output. MRF8S9200NR3 2 Rating 3 = 25°C unless otherwise noted) Symbol I ...
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... IMD sym VBW res = 58 W Avg. G out F ∆G ∆P1dB Min Typ Max = 1400 mA, 920--960 MHz Bandwidth — 200 — — 15 — — 45 — — 0.7 — — 0.012 — — 0.001 — MRF8S9200NR3 Unit W MHz MHz dB dB/°C dBm/°C 3 ...
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... C31 C1 C2 Figure 1. MRF8S9200NR3 Test Circuit Component Layout Table 6. MRF8S9200NR3 Test Circuit Component Designations and Values Part B1 Ferrite Beads, Short C1, C5, C19, C21, C22 Chip Capacitors C23, C24 Chip Capacitor C3 6.2 pF Chip Capacitor C4 2.2 μF Chip Capacitor C6, C7, C8, C9 3.3 pF Chip Capacitors C10, C12 6 ...
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... Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7 0.01% Probability on CCDF 110 P , OUTPUT POWER (WATTS) out Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power --30 --5 0 --32 --0.5 --10 --34 --1 --15 --36 --1.5 --20 --38 --2 --25 --40 --2.5 --30 975 1000 100 -- --25 45 --30 --35 40 --40 35 --45 30 --50 25 130 MRF8S9200NR3 5 ...
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... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S9200NR3 6 TYPICAL CHARACTERISTICS = 28 Vdc 1400 mA, Single--Carrier 960 MHz DD DQ 940 MHz f = 920 MHz ps 960 MHz 940 MHz ACPR η ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF8S9200NR3 7 ...
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... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S9200NR3 Vdc 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 960 MHz f = 940 MHz f = 920 MHz Actual Ideal f = 920 MHz f = 940 MHz INPUT POWER (dBm) ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9200NR3 9 ...
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... MRF8S9200NR3 10 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF8S9200NR3 11 ...
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... D1 minimum dimension from 0.730″ (18.54 mm) to 0.720″ (18.29 mm), revised dimension E2 from 0.312″ (7.92 mm) to 0.306″ (7.77 mm), and revised wording of Note 8 on Sheet 3. • Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the device MRF8S9200NR3 12 REVISION HISTORY Description ...
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... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF8S9200NR3 13 ...