MRF8S9200NR3 Freescale Semiconductor, MRF8S9200NR3 Datasheet - Page 5
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MRF8S9200NR3
Manufacturer Part Number
MRF8S9200NR3
Description
MOSFET RF N-CH 58W OM780-2
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF8S9200NR3.pdf
(13 pages)
Specifications of MRF8S9200NR3
Transistor Type
N-Channel
Frequency
940MHz
Gain
19.9dB
Voltage - Rated
70V
Current Rating
10µA
Current - Test
1.4A
Voltage - Test
28V
Power - Output
58W
Package / Case
OM-780-2
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
70V
Output Power (max)
58W
Power Gain (typ)@vds
19.9dB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
OM-780 EP
Pin Count
3
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
37.1%
Mounting
Surface Mount
Mode Of Operation
1-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF8S9200NR3
Manufacturer:
MSC
Quantity:
3 392
RF Device Data
Freescale Semiconductor
19.5
18.5
17.5
20
19
18
17
Figure 2. Output Peak- -to- -Average Ratio Compression (PARC)
20.5
19.5
18.5
17.5
16.5
--10
--20
--30
--40
--50
--60
21
20
19
18
17
16
--1
--2
--3
--4
--5
1
0
800
30
1
Broadband Performance @ P
PARC
ACPR
Figure 3. Intermodulation Distortion Products
--1 dB = 49.04 W
V
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
Compression (PARC) versus Output Power
DD
Figure 4. Output Peak- -to- -Average Ratio
825
= 28 Vdc, P
η
G
IRL
D
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
ps
50
TYPICAL CHARACTERISTICS
DD
850
versus Two- -Tone Spacing
G
= 28 Vdc, I
ps
P
out
TWO--TONE SPACING (MHz)
out
--2 dB = 69.69 W
= 160 W (PEP), I
PARC
, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
875
V
I
3.84 MHz Channel Bandwidth
DQ
IM3--L
DD
70
DQ
IM3--U
IM5--L
= 1400 mA, Single--Carrier W--CDMA
= 28 Vdc, P
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
= 1400 mA, f = 940 MHz
900
10
η
IM7--L
D
IM5--U
DQ
90
out
= 1400 mA
925
out
= 58 W (Avg.)
IM7--U
--3 dB = 95.95 W
ACPR
= 58 Watts Avg.
950
110
975
1000
130
100
44
42
40
38
36
--30
--32
--34
--36
--38
--40
55
50
45
40
35
30
25
--20
--25
--30
--35
--40
--45
--50
--5
--10
--15
--20
--25
--30
MRF8S9200NR3
--0.5
--1
--1.5
--2
--2.5
0
5