MRF6S23140HR3 Freescale Semiconductor, MRF6S23140HR3 Datasheet - Page 2

• Manufacturer Part Number: MRF6S23140HR3
• Description: MOSFET RF N-CHAN 28W 28W NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S23140HR3

• Transistor Type: N-Channel
• Frequency: 2.39GHz
• Gain: 15.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-880
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 28W
• Power Gain (typ)@vds: 15.2dB
• Frequency (min): 2.3GHz
• Frequency (max): 2.4GHz
• Package Type: NI-880
• Pin Count: 3
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 25%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF6S23140HR3 MRF6S23140HSR3
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
30 mV(rms)ac @ 1 MHz, V
GS
GS
= 300 Adc)
= 1300 mAdc, Measured in Functional Test)
= 3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
(T
C
= 25 C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
IRL
DSS
DSS
GSS
= 1300 mA, P
rss
ps
D
Min
0.1
—
—
—
—
13
23
—
—
—
1
2
out
= 28 W Avg., f = 2390 MHz, 2 - Carrier
0.21
15.2
Typ
- 37
- 40
- 15
2.8
25
—
—
—
2
2
Freescale Semiconductor
Max
500
- 35
- 38
0.3
10
17
—
—
—
1
3
4
RF Device Data
n dc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
Adc
Adc
pF
%