MRF6S23140HR3 Freescale Semiconductor, MRF6S23140HR3 Datasheet - Page 2
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MRF6S23140HR3
Manufacturer Part Number
MRF6S23140HR3
Description
MOSFET RF N-CHAN 28W 28W NI-880
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6S23140HR3.pdf
(12 pages)
Specifications of MRF6S23140HR3
Transistor Type
N-Channel
Frequency
2.39GHz
Gain
15.2dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
1.3A
Voltage - Test
28V
Power - Output
28W
Package / Case
NI-880
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
28W
Power Gain (typ)@vds
15.2dB
Frequency (min)
2.3GHz
Frequency (max)
2.4GHz
Package Type
NI-880
Pin Count
3
Reverse Capacitance (typ)
2@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
25%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
MRF6S23140HR3 MRF6S23140HSR3
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
30 mV(rms)ac @ 1 MHz, V
GS
GS
= 300 Adc)
= 1300 mAdc, Measured in Functional Test)
= 3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
(T
C
= 25 C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
IRL
DSS
DSS
GSS
= 1300 mA, P
rss
ps
D
Min
0.1
—
—
—
—
13
23
—
—
—
1
2
out
= 28 W Avg., f = 2390 MHz, 2 - Carrier
0.21
15.2
Typ
- 37
- 40
- 15
2.8
25
—
—
—
2
2
Freescale Semiconductor
Max
500
- 35
- 38
0.3
10
17
—
—
—
1
3
4
RF Device Data
n dc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
Adc
Adc
pF
%