MRF6S23140HR3 Freescale Semiconductor, MRF6S23140HR3 Datasheet - Page 8
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MRF6S23140HR3
Manufacturer Part Number
MRF6S23140HR3
Description
MOSFET RF N-CHAN 28W 28W NI-880
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6S23140HR3.pdf
(12 pages)
Specifications of MRF6S23140HR3
Transistor Type
N-Channel
Frequency
2.39GHz
Gain
15.2dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
1.3A
Voltage - Test
28V
Power - Output
28W
Package / Case
NI-880
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
28W
Power Gain (typ)@vds
15.2dB
Frequency (min)
2.3GHz
Frequency (max)
2.4GHz
Package Type
NI-880
Pin Count
3
Reverse Capacitance (typ)
2@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
25%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
MRF6S23140HR3 MRF6S23140HSR3
8
0.0001
0.001
0.01
100
0.1
10
1
64 DPCH, 67% Clipping, Single - Carrier Test Signal
0
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
2
PEAK−TO−AVERAGE (dB)
4
6
W - CDMA TEST SIGNAL
8
10
+20
+30
−10
−20
−30
−40
−50
−60
−70
−80
0
−25
−IM3 in
3.84 MHz BW
−20
Figure 14. 2-Carrier W-CDMA Spectrum
−15
−10
−ACPR in
3.84 MHz BW
f, FREQUENCY (MHz)
−5
3.84 MHz
Channel BW
0
+ACPR in
3.84 MHz BW
Freescale Semiconductor
5
10
RF Device Data
+IM3 in
3.84 MHz BW
15
20
25