MRF6S23140HR3 Freescale Semiconductor, MRF6S23140HR3 Datasheet - Page 8

• Manufacturer Part Number: MRF6S23140HR3
• Description: MOSFET RF N-CHAN 28W 28W NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S23140HR3

• Transistor Type: N-Channel
• Frequency: 2.39GHz
• Gain: 15.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-880
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 28W
• Power Gain (typ)@vds: 15.2dB
• Frequency (min): 2.3GHz
• Frequency (max): 2.4GHz
• Package Type: NI-880
• Pin Count: 3
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 25%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF6S23140HR3 MRF6S23140HSR3
8
0.0001
0.001
0.01
100
0.1
10
1
64 DPCH, 67% Clipping, Single - Carrier Test Signal
0
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
2
PEAK−TO−AVERAGE (dB)
4
6
W - CDMA TEST SIGNAL
8
10
+20
+30
−10
−20
−30
−40
−50
−60
−70
−80
0
−25
−IM3 in
3.84 MHz BW
−20
Figure 14. 2-Carrier W-CDMA Spectrum
−15
−10
−ACPR in
3.84 MHz BW
f, FREQUENCY (MHz)
−5
3.84 MHz
Channel BW
0
+ACPR in
3.84 MHz BW
Freescale Semiconductor
5
10
RF Device Data
+IM3 in
3.84 MHz BW
15
20
25