SHF-0189 Sirenza Microdevices Inc, SHF-0189 Datasheet - Page 2

• Manufacturer Part Number: SHF-0189
• Description: IC HFET ALGAAS/GAAS .5W SOT-89
• Manufacturer: Sirenza Microdevices Inc

Specifications of SHF-0189

• Transistor Type: HFET
• Frequency: 1.96GHz
• Gain: 20.1dB
• Voltage - Rated: 9V
• Current Rating: 200mA
• Noise Figure: 3.2dB
• Current - Test: 100mA
• Voltage - Test: 8V
• Power - Output: 27.5dBm
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 599-1060-2

SHF-0189(Z)
Typical Performance with Engineering Application Circuits
2 of 6
Absolute Maximum Ratings
Drain Current (I
Forward Gate Current (I
Reverse Gate Current (I
Drain-to-Source Voltage (V
Gate-to-Source Voltage (V
RF Input Power (P
Operating Lead Temperature (T
Storage Temperature Range (T
Power Dissipation (P
Channel Temperature (T
Moisture Sensitivity Level
Operation of this device beyond any one of these limits may cause permanent dam-
MTTF is inversely proportional to the device junction temperature. MTTF at
P
*P
DC
OUT
<(T
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
T
ture and MTTF considerations the bias condition should also satisfy the follow-
ing expressions:
Temperature (pin 4) (°C), R
J
=150°C exceeds 1E7 hours. For junction temperature. For junction tempera-
=+15dBm per tone, 1MHz tone spacing
J
1.50
1.25
1.00
0.75
0.50
0.25
0.00
- T
L
)/R
Parameter
-40
TH
DS
)
IN
where R
)
(MHz)
DISS
Freq
1960
2450
2140
900
-15
GSF
GSR
J
)
)
GS
DC
DS
)
)
)
)
=I
Operational (Tj<150C)
stor
ABS MAX (Tj<165C)
DS
L
TH
)
Lead Temperature (C)
*V
Power Derating Curve
10
)
=Thermal Resistance (°C/W)
DS
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
(W), T
35
J
=Junction Temperature (°C), T
-40 to +150
See graph
See graph
<-5 or >0
Rating
MSL 2
VDS
+165
60
+9.0
200
200
(V)
1.2
1.2
8
8
8
8
85
(mA)
IDQ
100
100
100
100
110
L
Unit
=Lead
mA
mA
mA
mW
°C
°C
°C
(dBm)
W
V
P1dB
V
27.6
27.2
27.5
27.3
135
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
160
OIP3*
(dBm)
40
40
40
40
Caution! ESD sensitive device.
Gain
(dB)
18.6
16.7
15.2
15.2
This area not recommended
for continuous reliable operation.
S11
(dB)
-25
-20
-24
-16
S22
(dB)
-13
-14
-14
EDS-101240 Rev G
-8
(dB)
NF
4.7
3.2
3.8
3.1