BLF6G10LS-200,118 NXP Semiconductors, BLF6G10LS-200,118 Datasheet - Page 6

• Manufacturer Part Number: BLF6G10LS-200,118
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20.2dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060895118; BLF6G10LS-200 /T3; BLF6G10LS-200 /T3

NXP Semiconductors
8. Test information
BLF6G10LS-200_1
Preliminary data sheet
Fig 7. Test circuit for operation at 800 MHz
Fig 8. Component layout
input
50
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
thickness = 0.76 mm.
See
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
thickness = 0.76 mm.
See
Table 8
Table 8
for list of components.
for list of components.
V
GG
R3
R2
C2
C2
C1
C14
800 -1000 MHz
C1
C14
C15
NXP
V1.0
IN
Rev. 01 — 18 January 2008
R2
C15
R1
Q3
C6
C8
C7
C9
C18
C19
800 -1000 MHz
C6
C3
C4
NXP
OUT
V1.0
C7
C8
C9
C3 C10
C10
C11
C4
C11
BLF6G10LS-200
C12
R1
L1
C13
r
r
= 3.5 and
= 3.5 and
Power LDMOS transistor
C13
L1
C12
V
DD
© NXP B.V. 2008. All rights reserved.
C20
R3
C5
C20
C5
001aah539
001aah540
output
50
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