MRF9080LR3 Freescale Semiconductor, MRF9080LR3 Datasheet - Page 2

• Manufacturer Part Number: MRF9080LR3
• Description: IC MOSFET RF N-CHAN NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF9080LR3

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 600mA
• Voltage - Test: 26V
• Power - Output: 75W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Power Gain (typ)@vds: 18.5dB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: NI-780
• Pin Count: 3
• Forward Transconductance (typ): 8S
• Output Capacitance (typ)@vds: 73@26VpF
• Reverse Capacitance (typ): 2.9@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Screw
• Mode Of Operation: GSM
• Number Of Elements: 1
• Power Dissipation (max): 250000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF9080LR3
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
1. Part is internally input matched.
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Output Capacitance
Reverse Transfer Capacitance
Power Output, 1 dB Compression Point
Common - Source Amplifier Power Gain @ 70 W (Min)
Drain Efficiency @ P
Drain Efficiency @ P1dB
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
DS
DD
DD
DD
DD
DD
= 65 Vdc, V
= 26 Vds, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 26 Vdc, V
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 26 Vdc, I
= 26 Vdc, I
= 26 Vdc, I
= 26 Vdc, P
DS
D
D
D
D
DQ
DQ
DQ
DQ
GS
GS
GS
GS
out
= 300 μAdc)
= 700 mAdc)
= 6 Adc)
= 2 Adc)
out
= 0 )
= 600 mA, f = 960 MHz)
= 600 mA, f = 960 MHz)
= 600 mA, f = 960 MHz)
= 0)
= 0)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 600 mA, f = 960 MHz)
= 70 W, I
= 70 W
(1)
Characteristic
DQ
= 600 mA, f = 960 MHz)
(T
C
= 25°C unless otherwise noted)
Symbol
V
V
V
P
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
g
η1
η2
1dB
oss
rss
fs
ps
Min
2.0
9.5
—
—
—
—
—
—
—
—
68
17
47
—
0.19
18.5
12.5
Typ
3.7
8.0
2.9
73
75
52
55
—
—
—
—
Freescale Semiconductor
Max
4.0
0.4
10
20
—
—
—
—
—
—
—
—
1
1
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dB
dB
pF
pF
W
%
%
S