MRF8P20160HSR3 Freescale Semiconductor, MRF8P20160HSR3 Datasheet - Page 6

• Manufacturer Part Number: MRF8P20160HSR3
• Description: DISCRETE RF FET
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20160HSR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 1.92GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 37W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

6
MRF8P20160HR3 MRF8P20160HSR3
18
17
16
15
14
13
12
Figure 4. Output Peak- -to- -Average Ratio Compression (PARC)
17.5
16.5
15.5
14.5
13.5
18
17
16
15
14
13
--1
--2
--3
--4
--5
--6
--20
--30
--40
--50
--60
--70
0
1850
0
Broadband Performance @ P
1
V
V
DD
GSB
V
I
(f1 + f2)/2 = Center Frequency of 1900 MHz
Figure 5. Intermodulation Distortion Products
DQA
Compression (PARC) versus Output Power
DD
V
V
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
= 28 Vdc, P
Figure 6. Output Peak- -to- -Average Ratio
DD
GSB
1875
= 1.6 Vdc, Single--Carrier W--CDMA
= 28 Vdc, P
= 550 mA, V
= 28 Vdc, I
= 1.6 Vdc, f = 1900 MHz
TYPICAL CHARACTERISTICS
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
20
1900
versus Two- -Tone Spacing
out
P
out
out
DQA
GSB
= 37 W (Avg.), I
TWO--TONE SPACING (MHz)
= 40 W (PEP)
, OUTPUT POWER (WATTS)
1925
f, FREQUENCY (MHz)
= 1.6 Vdc, Two--Tone Measurements
--1 dB = 16 W
= 550 mA
IM5--L
--2 dB = 26 W
40
IM5--U
1950
10
DQA
IM7--L
IM3--U
IM3--L
IM7--U
--3 dB = 36 W
= 550 mA
60
1975
out
G
= 37 Watts Avg.
ps
2000
η
D
PARC
IRL
80
PARC
2025
ACPR
G
ACPR
η
ps
D
2050
100
100
49
48
47
46
45
--28
--29
--30
--31
--32
--33
60
50
40
30
20
10
0
0
--10
--20
--30
--40
--50
--60
--10
--13
--16
--19
--22
--25
Freescale Semiconductor
RF Device Data
--2.5
--3
--3.5
--4
--4.5
--5