MRF8P20160HSR3 Freescale Semiconductor, MRF8P20160HSR3 Datasheet - Page 7

• Manufacturer Part Number: MRF8P20160HSR3
• Description: DISCRETE RF FET
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20160HSR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 1.92GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 37W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
0.0001
0.001
0.01
100
0.1
10
1
0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Figure 9. CCDF W- -CDMA IQ Magnitude
Clipping, Single- -Carrier Test Signal
2
PEAK--TO--AVERAGE (dB)
4
Input Signal
18
17
16
15
14
13
12
18
12
15
6
Figure 7. Single- -Carrier W- -CDMA Power Gain, Drain
9
6
3
0
1660
1
1880 MHz
V
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
DD
Efficiency and ACPR versus Output Power
Figure 8. Broadband Frequency Response
1720
= 28 Vdc, I
8
TYPICAL CHARACTERISTICS
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1900 MHz
1780
P
W- -CDMA TEST SIGNAL
out
DQA
10
, OUTPUT POWER (WATTS) AVG.
= 550 mA, V
1920 MHz
1840
f, FREQUENCY (MHz)
10
1920 MHz
12
1900
GSB
Gain
IRL
= 1.6 Vdc
1960
1900 MHz
1880 MHz
--100
--10
--20
--30
--40
--50
--60
--70
--80
--90
10
0
--9
V
P
I
V
DQA
2020
DD
in
GSB
Figure 10. Single- -Carrier W- -CDMA Spectrum
= 0 dBm
--ACPR in 3.84 MHz
= 28 Vdc
= 550 mA
--7.2
100
= 1.6 Vdc
Integrated BW
2080
G
ACPR
η
--5.4
ps
D
2140
MRF8P20160HR3 MRF8P20160HSR3
300
--3.6
0
--7
--14
--21
--28
--35
--42
60
50
40
30
20
10
0
f, FREQUENCY (MHz)
--1.8
Channel BW
3.84 MHz
0
0
--10
--20
--30
--40
--50
--60
1.8
+ACPR in 3.84 MHz
3.6
Integrated BW
5.4
7.2
9
7