AT-41532-TR1G Avago Technologies US Inc., AT-41532-TR1G Datasheet - Page 4

• Manufacturer Part Number: AT-41532-TR1G
• Description: IC TRANS NPN GP BIPOLAR SOT-323
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41532-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Noise Figure (db Typ @ F): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
• Gain: 9dB ~ 15.5dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 10GHz
• Power Dissipation Pd: 225mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1569-2

AT-41532 Typical Scattering Parameters,
AT-41532 Typical Noise Parameters,
Common Emitter, Z
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
4
Freq.
GHz
0.5
0.75
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
Freq.
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1 – |S
2*|S
S
S
11
21
12
21
|
12
2
S
Mag
0.787
0.697
0.620
0.554
0.538
0.543
0.559
0.561
0.545
0.534
0.544
0.563
0.597
0.655
0.703
| /|S
(k ±
11
– |S
| |S
F
dB
1.4
1.8
1.9
2.2
2.6
3.1
3.6
min
12
21
√
22
|
|
k
|
2
2
O
–1)
+ |D|
= 50 Ω, V
Ang
-75
-104
-128
-166
-164
118
79
47
28
14
2
-10
-23
-34
-42
2
; D = S
Γ
Mag
0.44
0.57
0.60
0.66
0.71
0.75
0.77
opt
CE
= 1 V, I
11
dB
8.79
7.28
5.84
3.40
1.52
-1.06
-2.61
-3.06
-2.81
-2.46
-2.38
-2.49
-2.79
-3.39
-4.03
S
22
Common Emitter, Z
– S
C
Ang
92
-183
-169
-140
-116
-95
-77
= 1 mA
12
S
S
Mag
2.750
2.311
1.960
1.480
1.191
0.886
0.741
0.703
0.724
0.754
0.761
0.751
0.725
0.677
0.629
21
21
R
ohms
12.4
3.0
3.3
10.1
27.6
59.9
103.0
n
Ang
125
106
90
66
48
22
5
-7
-20
-35
-52
-68
-84
-100
-112
O
= 50 Ω, V
dB
-20.18
-18.74
-18.40
-18.80
-18.69
-13.30
-8.03
-4.83
-3.11
-2.30
-2.08
-2.18
-2.52
-3.15
-3.76
G
dB
9.4
7.6
6.7
5.7
4.6
3.5
2.1
assoc
CE
= 1 V, I
C
S
Mag
0.098
0.116
0.120
0.115
0.116
0.216
0.397
0.574
0.699
0.768
0.787
0.778
0.748
0.696
0.649
12
= 1 mA
20
16
12
-4
8
4
0
0
Figure 9. Gain vs. Frequency at 1 V, 1 mA.
Note: dB(|S
Ang
49
38
31
30
42
60
47
24
0
-23
-44
-63
-80
-96
-110
1
FREQUENCY (GHz)
2
21
|) = 20 * log(|S
S
Mag
0.860
0.785
0.734
0.678
0.653
0.620
0.568
0.487
0.398
0.362
0.407
0.467
0.523
0.593
0.665
3
22
dB(S|2,1|)
4
gmax
k
21
5
|)
Ang
-22
-28
-32
-40
-50
-73
-102
-137
-180
130
88
58
35
16
-6
6
1.50
1.25
1.00
0.75
0.50
0.25
0