MMBTH10LT1G ON Semiconductor, MMBTH10LT1G Datasheet

TRANS SS VHF MIXER NPN 25V SOT23

MMBTH10LT1G

Manufacturer Part Number
MMBTH10LT1G
Description
TRANS SS VHF MIXER NPN 25V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBTH10LT1G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
3 V
Power Dissipation
225 mW
Maximum Operating Frequency
650 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 at 4 mA at 10 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
25V
Collector-base Voltage
30V
Emitter-base Voltage
3V
Dc Current Gain (min)
60
Frequency (max)
650MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector (ic) (max)
-
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTH10LT1GOS
MMBTH10LT1GOS
MMBTH10LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTH10LT1G
Manufacturer:
ON
Quantity:
15 000
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MMBTH10LT1G
Manufacturer:
ON Semiconductor
Quantity:
2 600
Part Number:
MMBTH10LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBTH10LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBTH10LT1G
0
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Part Number:
MMBTH10LT1G
Quantity:
19 157
Company:
Part Number:
MMBTH10LT1G
Quantity:
2 500
MMBTH10LT1G,
MMBTH10-4LT1G
VHF/UHF Transistor
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 3
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
FR−5 Board (Note 1)
T
Derate above 25°C
Junction to Ambient (Note 1)
Alumina Substrate (Note 2)
T
Derate above 25°C
Junction to Ambient (Note 2)
Temperature Range
A
A
= 25°C
= 25°C
Characteristic
Rating
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
θJA
θJA
D
D
stg
−55 to
Value
+150
Max
225
556
300
417
3.0
1.8
2.4
25
30
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBTH10LT1G
MMBTH10LT3G
MMBTH10−4LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBTH10LT1G
(Note: Microdot may be in either location)
Device
3EM MG
3EM, 3E4 = Specific Device Code
M
G
ORDERING INFORMATION
G
MARKING DIAGRAMS
http://onsemi.com
BASE
SOT−23 (TO−236AB)
1
1
= Date Code*
= Pb−Free Package
CASE 318
STYLE 6
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
COLLECTOR
2
EMITTER
Publication Order Number:
3
2
MMBTH10−04LT1G
3
3E4 MG
MMBTH10LT1/D
10000/Tape &
3000/Tape &
3000/Tape &
Shipping
G
Reel
Reel
Reel

Related parts for MMBTH10LT1G

MMBTH10LT1G Summary of contents

Page 1

... Date Code Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBTH10LT1G SOT−23 3000/Tape & (Pb−Free) Reel MMBTH10LT3G SOT−23 10000/Tape & (Pb−Free) Reel MMBTH10−4LT1G SOT− ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (I = 1.0 mAdc Collector−Base Breakdown Voltage (I = 100 μAdc Emitter−Base Breakdown Voltage ( μAdc ...

Page 3

COMMON−BASE y PARAMETERS versus FREQUENCY ( 100 200 300 400 f, FREQUENCY (MHz) Figure 1. Rectangular Form ...

Page 4

COMMON−BASE y PARAMETERS versus FREQUENCY ( 5.0 4.0 3 2.0 1.0 0 100 200 300 400 f, FREQUENCY (MHz) Figure 5. Rectangular Form 10 9.0 8.0 7.0 6.0 5 4.0 3.0 2.0 1.0 0 ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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