MMBTH10LT1G ON Semiconductor, MMBTH10LT1G Datasheet - Page 4
MMBTH10LT1G
Manufacturer Part Number
MMBTH10LT1G
Description
TRANS SS VHF MIXER NPN 25V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBTH10LT1G.pdf
(5 pages)
Specifications of MMBTH10LT1G
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
3 V
Power Dissipation
225 mW
Maximum Operating Frequency
650 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 at 4 mA at 10 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
25V
Collector-base Voltage
30V
Emitter-base Voltage
3V
Dc Current Gain (min)
60
Frequency (max)
650MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector (ic) (max)
-
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTH10LT1GOS
MMBTH10LT1GOS
MMBTH10LT1GOSTR
MMBTH10LT1GOS
MMBTH10LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTH10LT1G
Manufacturer:
ON
Quantity:
15 000
Company:
Part Number:
MMBTH10LT1G
Manufacturer:
ON Semiconductor
Quantity:
2 600
Company:
Part Number:
MMBTH10LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBTH10LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
5.0
4.0
3.0
2.0
1.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
10
0
0
100
100
Figure 5. Rectangular Form
Figure 7. Rectangular Form
200
200
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
300
300
COMMON−BASE y PARAMETERS versus FREQUENCY
400
-b
400
b
ob
rb
y
(V
rb
MPS H11
500
500
CB
, REVERSE TRANSFER ADMITTANCE
MPS H10
TYPICAL CHARACTERISTICS
= 10 Vdc, I
-g
g
y
ob
rb
ob
700
700
, OUTPUT ADMITTANCE
http://onsemi.com
-b
rb
C
1000
1000
= 4.0 mAdc, T
4
- 1.0
- 2.0
- 3.0
- 4.0
- 5.0
8.0
6.0
4.0
2.0
10
-2.0
0
0
0
100
200
400
-1.8
A
= 25°C)
700
-1.2
2.0
1000 MHz
-0.8
Figure 6. Polar Form
Figure 8. Polar Form
-0.4
4.0
g
g
rb
ob
(mmhos)
(mmhos)
0
1000 MHz
100
200
400
700
0.4
6.0
0.8
1.2
8.0
1.6
2.0
10