BFS17NTA Diodes Zetex, BFS17NTA Datasheet - Page 2

• Manufacturer Part Number: BFS17NTA
• Description: TRANS RF NPN 3.2GHZ 11V SOT23
• Manufacturer: Diodes Zetex

Specifications of BFS17NTA

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 11V
• Frequency - Transition: 3.2GHz
• Power - Max: 330mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 5mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Other names: BFS17NTADITR; BFS17NTADITR; BFS17NTATR

Maximum Ratings
Thermal Characteristics
Thermal Characteristics and Derating information
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
Thermal Resistance, Junction to Ambient (Note 4) @ T
Operating and Storage Temperature Range
Notes:
Document Number DS32160 Rev. 2 - 2
BFS17N
4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
350
300
250
200
150
100
50
100µ
Transient Thermal Impedance
0
A
= 25°C (Note 4)
D=0.5
D=0.2
Characteristic
Characteristic
1m
@T
A
10m 100m
= 25°C unless otherwise specified
Pulse Width (s)
D=0.1
D=0.05
1
Single Pulse
A
10
= 25°C
100
www.diodes.com
1k
2 of 6
Symbol
Symbol
T
V
V
V
J,
R
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
P
CBO
CEO
EBO
I
T
θ JA
C
D
STG
0
20
Derating Curve
40
Temperature (°C)
Diodes Incorporated
A Product Line of
60
-55 to +150
Value
Value
80
330
380
20
11
50
3
100 120 140 160
© Diodes Incorporated
BFS17N
°C/W
Unit
August 2010
Unit
mW
mA
°C
V
V
V