BFS17NTA Diodes Zetex, BFS17NTA Datasheet - Page 3

• Manufacturer Part Number: BFS17NTA
• Description: TRANS RF NPN 3.2GHZ 11V SOT23
• Manufacturer: Diodes Zetex

Specifications of BFS17NTA

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 11V
• Frequency - Transition: 3.2GHz
• Power - Max: 330mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 5mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Other names: BFS17NTADITR; BFS17NTADITR; BFS17NTATR

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Transition Frequency (Note 5)
Collector Output Capacitance (Note 5)
Notes:
Document Number DS32160 Rev. 2 - 2
BFS17N
5. Measured under pulsed conditions. Pulse width ≤ 300
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
µs. Duty cycle ≤ 2%
I
I
CE(sat)
h
C
CBO
EBO
f
FE
T
ob
www.diodes.com
3 of 6
Min
1.4
20
11
56
3
−
−
−
−
Typ
3.2
0.8
−
−
−
−
−
−
−
Max
180
0.5
0.5
0.5
1.5
Diodes Incorporated
−
−
−
−
A Product Line of
GHz
Unit
µA
µA
pF
V
V
V
−
V
I
I
I
V
V
I
I
I
f = 500MHz
V
C
C
E
C
C
E
CB
EB
CB
= 10µA
= 1mA
= 10µA
= 5mA, V
= 25mA, I
= 25mA, V
= 10V
= 10V, f = 1MHz
= 2V
Test Condition
CE
B
CE
= 5mA
= 10V
= 5V,
© Diodes Incorporated
BFS17N
August 2010