AT-31033-BLKG Avago Technologies US Inc., AT-31033-BLKG Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/0/86/avago_technologies_us_inc__sml.jpg)
AT-31033-BLKG
Manufacturer Part Number
AT-31033-BLKG
Description
TRANS NPN BIPO 5.5V 16MA SOT-23
Manufacturer
Avago Technologies US Inc.
Specifications of AT-31033-BLKG
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Noise Figure (db Typ @ F)
0.9dB ~ 1.2dB @ 900MHz
Gain
9dB ~ 11dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 1mA, 2.7V
Current - Collector (ic) (max)
16mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
5.5V
Transition Frequency Typ Ft
10GHz
Power Dissipation Pd
150mW
Dc Collector Current
16mA
Dc Current Gain Hfe
70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-31033-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-31011, AT-31033 Absolute Maximum Ratings
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. T
3. Derate at 1.82 mW/°C for T
Electrical Specifications, T
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise Fig-
ure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
2
W = 10 L = 1000
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
Symbol
Symbol
Mounting Surface
1000 pF
V
V
V
T
I
I
h
NF
G
CBO
P
EBO
EBO
CBO
CEO
I
T
STG
C
FE
T
j
A
V
BB
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Noise Figure
V
Associated Gain
V
Forward Current
Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
= 25°C.
CE
CE
W = 10 L = 1860
= 2.7 V, I
= 2.7 V, I
Parameters and Test Conditions
Parameter
C
W = 30 L = 100
C
C
= 1 mA
> 67.5°C.
= 1 mA
A
= 25°C
[2,3]
AT-31011 fig 1
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
W = 30 L = 100
Units
mW
mA
°C
°C
V
V
V
NOT TO SCALE
W = 10 L = 1860
f = 0.9 GHz
f = 0.9 GHz
V
I
CE
C
V
V
CB
= 1 mA
EB
= 2.7 V
Absolute Maximum
= 3 V
= 1 V
-65 to 150
150
150
V
1.5
5.5
11
16
CC
Units
µA
µA
dB
dB
-
W = 10 L = 1025
25 Ω
1000 pF
[1]
11
Min
70
[1]
AT-31011
0.9
13
0.05
Typ
0.1
[1]
[1]
1.2
Thermal Resistance
Max
300
0.2
1.5
[1]
θ
jc
= 550°C/W
Min
9
70
[2]
AT-31033
0.9
11
0.05
Typ
0.1
[2]
[2]
[2]
:
1.2
Max
300
0.2
1.5
[2]