AT-32011-BLKG Avago Technologies US Inc., AT-32011-BLKG Datasheet - Page 2
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AT-32011-BLKG
Manufacturer Part Number
AT-32011-BLKG
Description
TRANS NPN BIPO 5.5V 32MA SOT-143
Manufacturer
Avago Technologies US Inc.
Specifications of AT-32011-BLKG
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Noise Figure (db Typ @ F)
1dB ~ 1.3dB @ 900MHz
Gain
12.5dB ~ 14dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 2mA, 2.7V
Current - Collector (ic) (max)
32mA
Mounting Type
Surface Mount
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
5.5V
Transition Frequency Typ Ft
10GHz
Power Dissipation Pd
200mW
Dc Collector Current
320mA
Dc Current Gain Hfe
300
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-32011-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-32011, AT-32033 Absolute Maximum Ratings
Electrical Specifications, T
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match.
2
1000 pF
RF IN
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
output loss = 0.3 dB.
output loss = 0.3 dB.
Symbol
Symbol
I
I
V
NF
G
V
V
T
h
CBO
EBO
CBO
P
EBO
CEO
I
T
STG
FE
A
C
T
j
W = 10
CKT A: L = 380
CKT B: L = 380
V
BB
Noise Figure
Associated Gain
Forward Current Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
V
V
V
V
V
Parameters and Test Conditions
CE
CE
CB
CE
EB
W = 10 L = 1870
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
= 2.7 V, I
= 2.7 V, I
= 1 V
= 2.7 V, I
= 3 V
C
C
C
= 2 mA
= 2 mA
A
= 2 mA
= 25°C
W = 30
L = 60
[2, 3]
AT-32011 fig 1
f = 0.9 GHz
f = 0.9 GHz
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
W = 30
L = 60
Units
mW
mA
°C
°C
V
V
V
W = 10 L = 1870
NOT TO SCALE
Units
µA
µA
dB
dB
–
Maximum
-65 to 150
Absolute
V
200
150
W = 10
CKT A: L = 105
CKT B: L = 850
CC
1.5
5.5
11
32
12.5
Min.
70
CKT A: 25 Ω
CKT B: 5 Ω
[1]
[1]
AT-32011
1.0
Typ.
14
1000 pF
[1]
[1]
RF OUT
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. T
3. Derate at 1.82 mW/°C for T
Mounting Surface
Max.
1.3
300
0.2
1.5
[1]
Thermal Resistance
θ
jc
Min.
= 25°C.
11
70
= 550 °C/W
[2]
AT-32033
12.5
1.0
Typ.
C
[2]
> 40°C.
[2]
[2]
:
Max.
1.3
300
0.2
1.5
[2]