NE85630-T1-R25-A CEL, NE85630-T1-R25-A Datasheet - Page 18
![TRANSISTOR NPN 1GHZ SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
NE85630-T1-R25-A
Manufacturer Part Number
NE85630-T1-R25-A
Description
TRANSISTOR NPN 1GHZ SOT-323
Manufacturer
CEL
Datasheet
1.NE85619-T1-A.pdf
(26 pages)
Specifications of NE85630-T1-R25-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
4.5GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain
6dB ~ 12dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 7mA, 3V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.1 A
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE85630-T1-R25-A
Manufacturer:
NEC
Quantity:
20 000
NE85630 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
1.96e-4
2.8e-12
1.1e-12
32e-16
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
Q1
3.9
3.6
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
VJS
ITF
EG
XTI
FC
TR
KF
TF
AF
Base
C
BEPKG
L
10e-12
BX
1e-9
0.55
0.75
1.11
0.3
0.5
Q1
0.2
10
0
0
6
0
0
3
0
1
(1)
L
B
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
CE
C
CEPKG
L
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
ADDITIONAL PARAMETERS
CX
Q1
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
Collector
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
0.05 to 3.0 GHz
V
10/25/96
CE
= 2.5 V to 10 V, I
NE85630
NE856 SERIES
0.09e-12
0.16e-12
1.4e-9
0.93e-9
0.12e-12
0.16e-12
0.04e-12
0.2e-9
0.2e-9
0.2e-9
ohms
amps
seconds
farads
henries
volts
Units
C
= 0.3 mA to 10 mA