NE85630-T1-R25-A CEL, NE85630-T1-R25-A Datasheet - Page 20
![TRANSISTOR NPN 1GHZ SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
NE85630-T1-R25-A
Manufacturer Part Number
NE85630-T1-R25-A
Description
TRANSISTOR NPN 1GHZ SOT-323
Manufacturer
CEL
Datasheet
1.NE85619-T1-A.pdf
(26 pages)
Specifications of NE85630-T1-R25-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
4.5GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain
6dB ~ 12dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 7mA, 3V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.1 A
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE85630-T1-R25-A
Manufacturer:
NEC
Quantity:
20 000
NE85635 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
1.96e-4
2.8e-12
1.1e-12
32e-16
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
Q1
3.9
3.6
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
BASE
VJS
ITF
EG
XTI
FC
TR
KF
TF
AF
CBEX_PKG
RB_PKG
0.1 ohms
0.1pF
10e-12
1e-9
0.55
0.75
1.11
0.3
0.5
Q1
0.2
10
LB_PKG
0.15nH
0
0
6
0
0
3
0
1
(1)
0.05pF
CBE_PKG
0.77nH
LB
0.09pF
CCB
CCB_PKG
0.05pF
68100
RE_PKG
0.1 ohms
LE_PKG
0.23nH
EMITTER
CCE
0.16pF
0.45nH
LC
Q1
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
0.15nH
LC_PKG
CCE_PKG
0.2pF
CCEX_PKG
Parameter
time
capacitance
inductance
resistance
voltage
current
0.2pF
0.1 ohms
RC_PKG
0.05 to 5.0 GHz
V
11/1/96
CE
= 10 V, I
COLLECTOR
NE856 SERIES
NE856 SERIES
C
= 7 mA to 30 mA
seconds
farads
henries
ohms
volts
amps
Units