NE68019-A CEL, NE68019-A Datasheet - Page 16
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NE68019-A
Manufacturer Part Number
NE68019-A
Description
TRANSISTOR NPN 2GHZ 3-SMD
Manufacturer
CEL
Datasheet
1.NE68019-T1-A.pdf
(20 pages)
Specifications of NE68019-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
10GHz
Noise Figure (db Typ @ F)
1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
Gain
9.6dB ~ 13.5dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 3V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
3 GHz
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.035 A
Power Dissipation
0.1 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
BJT NONLINEAR MODEL PARAMETERS
SCHEMATIC
NE68035 NONLINEAR MODEL
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
0.358e-12
0.162e-12
3.84e-16
1.0e-14
4.01e-4
Infinity
Infinity
124.9
0.027
1.05
11.9
2.17
1.05
17.9
1.02
10.5
0.71
0.79
BASE
0.6
0.5
Q1
1
0
2
Parameters
CBEX_PKG
RB_PKG
0.1 ohms
XCJC
MJC
MJS
0.1pF
CJS
VJS
XTF
VTF
PTF
XTB
XTI
ITF
EG
FC
TF
TR
KF
AF
LB_PKG
0.15nH
0.635e-9
8.7e-12
0.082
CBE_PKG
0.05pF
0.64
0.75
19.1
1.11
0.5
Q1
18
0
0
0
0
0
3
0
1
0.45nH
LB
0.07pF
CCB
CCB_PKG
0.11pF
(1)
68100
RE_PKG
0.1 ohms
LE_PKG
0.38nH
EMITTER
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
CCE
0.01pF
0.96nH
LC
time
capacitance
inductance
resistance
voltage
current
Parameter
0.05 to 5.0 GHz
V
10/31/96
CE
0.15nH
LC_PKG
CCE_PKG
0.2pF
Q1
= 6 V, I
CCEX_PKG
0.2pF
C
0.1 ohms
RC_PKG
= 5 mA to 20 mA
seconds
farads
henries
ohms
volts
amps
Units
COLLECTOR