NE68619-A CEL, NE68619-A Datasheet - Page 3

• Manufacturer Part Number: NE68619-A
• Description: TRANSISTOR NPN 2GHZ SC-90
• Manufacturer: CEL

Specifications of NE68619-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 13GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2dB @ 2GHz
• Power - Max: 30mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 7mA, 2V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 3 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.01 A
• Power Dissipation: 0.030 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NE68619-T1-A

TYPICAL PERFORMANCE CURVES
100
100
50
50
0
0
0
0
D.C. POWER DERATING CURVE
D.C. POWER DERATING CURVE
Ambient Temperature, T
Ambient Temperature, T
NE68618, NE68630
NE68633, NE68639
50
50
100
100
FREE AIR
A
A
FREE AIR
(°C)
(°C)
150
150
(TA = 25°)
100
50
20
10
25
15
0
0
5
0
0
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
D.C. POWER DERATING CURVE
Ambient Temperature, T
COLLECTOR CURRENT vs.
2.2
50
NE68619
2.4
100
2.6
160 µA
100 µA
200 µA
180 µA
140 µA
120 µA
I
B
80 µA
60 µA
40 µA
A
FREE AIR
= 20 µA
(°C)
CE
(V)
150