NE68619-A CEL, NE68619-A Datasheet - Page 4

• Manufacturer Part Number: NE68619-A
• Description: TRANSISTOR NPN 2GHZ SC-90
• Manufacturer: CEL

Specifications of NE68619-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 13GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2dB @ 2GHz
• Power - Max: 30mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 7mA, 2V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 3 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.01 A
• Power Dissipation: 0.030 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NE68619-T1-A

TYPICAL PERFORMANCE CURVES
100
500
200
50
40
30
20
10
12
10
10
14
50
20
0
8
6
4
1
1
0
f = 2 GHz
V
Base to Emitter Voltage, VBE (V)
CE
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
= 2 V
2
D.C. CURRENT GAIN vs.
Collector Current, I
COLLECTOR CURRENT
COLLECTOR CURRENT
Collector Current, I
INSERTION GAIN vs.
2
5
NE68618
V
CE
0.5
V
10
CE
= 2 V
= 1 V
20
C
C
5
(mA)
(mA)
V
CE
2 V
= 1 V
50
10
100
1.0
(TA = 25°C)
0.8
0.6
0.2
0.4
18
16
12
10
14
4
3
2
0
1
6
8
4
0.0
1
1
COLLECTOR TO BASE VOLTAGE
f = 2 GHz
Collector to Base Voltage, V
FEED-BACK CAPACITANCE vs.
f = 2 GHz
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
2
COLLECTOR CURRENT
Collector Current, I
Collector Current, I
2.0
NOISE FIGURE vs.
2
5
NE68633
NE68618
NE68630
4.0
10
V
V
CE
CE
6.0
2 V
= 1 V
= 2 V
V
20
C
C
CE
(mA)
(mA)
= 1 V
5
8.0
CB
f = 1 MHz
(V)
100
10.0
10