UPA861TD-A CEL, UPA861TD-A Datasheet - Page 2

• Manufacturer Part Number: UPA861TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA861TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 12GHz, 20GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2dB @ 2GHz
• Power - Max: 195mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 10mA, 1V / 50 @ 5mA, 1V
• Current - Collector (ic) (max): 30mA, 35mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 140
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note: 1. Operation in excess of any one of these parameters may
TYPICAL CHARACTERISTICS
SYMBOLS
V
V
V
T
P
CBO
CEO
T
STG
EBO
I
C
2. Mounted on 1.08cm
T
J
result in permanent damage.
300
250
200
150
100
0.5
0.4
0.3
0.2
0.1
195
105
50
90
0
REVERSE TRANSFER CAPACITANCE vs.
0
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
TOTAL POWER DISSIPATION vs.
2 Elements in total
Q2
Q1
COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
PARAMETERS
Ambient Temperature, T
25
AMBIENT TEMPERATURE
1
50
2
Mounted on Glass Epoxy PCB
(1.08 cm
x 1.0 mm(t) glass epoxy PCB
2
Q1
75
2
x 1.0mm (t))
1
3
100
A
UNITS
f = 1 MHz
mW
mA
(ºC)
CB
°C
°C
V
V
V
4
125
(T
(V)
A
1,2
= 25°C, unless otherwise specified)
150
-65 to +150
90
150
RATINGS
Q1
30
5
195 Total
5
3
2
(T
A
= 25°C)
105
1.5
150
Q2
35
9
3
ORDERING INFORMATION
PART NUMBER
UPA861TD-T3-A
0.5
0.4
0.3
0.2
0.1
REVERSE TRANSFER CAPACITANCE vs.
0
COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
2
10K Pcs./Reel
QUANTITY
4
Q2
6
f = 1 MHz
CB
8
(V)
PACKAGING
Tape & Reel
10