UPA861TD-A CEL, UPA861TD-A Datasheet - Page 3

• Manufacturer Part Number: UPA861TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA861TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 12GHz, 20GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2dB @ 2GHz
• Power - Max: 195mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 10mA, 1V / 50 @ 5mA, 1V
• Current - Collector (ic) (max): 30mA, 35mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 140
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS, cont.
0.0001
0.0001
0.001
0.001
0.01
0.01
100
100
0.1
0.1
10
10
35
30
25
20
15
10
1
1
5
0
0.4
0.4
COLLECTOR TO EMITTER VOLTAGE
V
V
CE
CE
Collector to Emitter Voltage, V
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
= 1 V
Base to Emitter Voltage, V
= 2 V
BASE TO EMITTER VOLTAGE
0.5
0.5
COLLECTOR CURRENT vs.
COLLECTOR CURRENT vs.
COLLECTOR CURRENT vs.
400 A
1
0.6
0.6
µ
0.7
0.7
Q1
2
0.8
0.8
I
B
IB = 50 A
: 50 A step
3
BE
BE
300 A
200 A
100 A
0.9
0.9
µ
(V)
CE
(V)
µ
µ
µ
µ
(V)
1.0
1.0
4
(T
A
= 25°C, unless otherwise specified)
0.0001
0.0001
0.001
0.001
0.01
0.01
100
100
0.1
0.1
10
10
40
30
20
10
1
1
0
0.4
0.4
COLLECTOR TO EMITTER VOLTAGE
V
V
500 A
CE
CE
Collector to Emitter Voltage, V
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
= 1 V
= 2 V
COLLECTOR CURRENT vs.
0.5
COLLECTOR CURRENT vs.
0.5
COLLECTOR CURRENT vs.
µ
1
450 A
0.6
0.6
µ
Q2
0.7
0.7
2
400 A
0.8
0.8
I
µ
B
3
= 50 A
BE
BE
350 A
300 A
250 A
200 A
150 A
100 A
0.9
0.9
(V)
(V)
CE
µ
µ
µ
µ
µ
µ
µ
UPA861TD
(V)
1.0
1.0
4