AT-42036-TR1G Avago Technologies US Inc., AT-42036-TR1G Datasheet - Page 2

• Manufacturer Part Number: AT-42036-TR1G
• Description: TRANS NPN BIPO 12V 80MA 36-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-42036-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 2GHz ~ 4GHz
• Gain: 10dB ~ 13.5dB
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (36 micro-X)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 600mW
• Dc Collector Current: 80mA
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AT-42036 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 5.7 mW/°C for T
4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into
5. The small spot size of this technique results in a higher, though more accurate determination
2
Electrical Specifications
T
Symbol
V
V
V
I
P
T
T
Symbol
|S
P
G
NF
G
f
h
I
I
C
Note:
1. For this test, the emitter is grounded.
C
CBO
EBO
T
A
T
j
STG
EBO
CBO
CEO
1 dB
FE
CB
1 dB
A
21E
a circuit.
of θ
information.
= 25°C
O
case
|
2
jc
= 25°C.
than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more
Parameters and Test Conditions
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
CE
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
= 8 V, I
c
C
O
> 95°C.
; V
= 35 mA
CE
= 8 V, I
[2,3]
C
CE
[4]
= 10 mA
EB
CE
CE
= 8 V, I
CB
[1]
CE
= 1 V
[1]
= 8 V, I
= 8 V, I
= 8 V
: V
[1]
= 8 V, I
CB
C
CE
Units
V
V
V
mA
mW
°C
°C
= 35 mA
C
C
= 8 V, f = 1 MHz
= 8 V, I
= 35 mA f = 2.0 GHz
= 10 mA f = 2.0 GHz
C
= 35 mA
C
= 35 mA
Frequency
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 4.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Absolute Maximum
1.5
20
12
80
600
150
-65 to 150
Units
dB
dBm
dB
dB
dB
GHz
—
µA
µA
Thermal Resistance
θ
jc
= 175°C/W
Min.
10.0
30
pF
Typ.
11.0
5.0
21.0
20.5
14.0
9.5
2.0
3.0
13.5
10.0
8.0
150
[2,5]
:
Max.
270
0.2
2.0
0.28