LM3046MX/NOPB National Semiconductor, LM3046MX/NOPB Datasheet - Page 2

• Manufacturer Part Number: LM3046MX/NOPB
• Description: IC TRANSISTOR ARRAY 14-SOIC
• Manufacturer: National Semiconductor

Specifications of LM3046MX/NOPB

• Transistor Type: 5 NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Noise Figure (db Typ @ F): 3.25dB @ 1kHz
• Power - Max: 750mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (3.9mm Width), 14-SOL
• Transistor Polarity: NPN
• Number Of Elements: 5
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 40
• Power Dissipation: 750mW
• Frequency (max): 120MHz
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 14
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant
• Other names: *LM3046MX; *LM3046MX/NOPB; LM3046MX

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Collector to Base Breakdown Voltage (V
Collector to Emitter Breakdown Voltage (V
Collector to Substrate Breakdown
Voltage (V
Emitter to Base Breakdown Voltage (V
Collector Cutoff Current (I
Collector Cutoff Current (I
Static Forward Current Transfer
Ratio (Static Beta) (h
Input Offset Current for Matched
Pair Q
Base to Emitter Voltage (V
Magnitude of Input Offset Voltage for
Differential Pair |V
Magnitude of Input Offset Voltage for Isolated
Transistors |V
|V
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” for other methods of soldering surface
mount devices.
Electrical Characteristics
(T
BE5
A
= 25˚C unless otherwise specified)
− V
1
and Q
BE3
(BR)CIO
|
BE3
2
|I
)
O1
Power Dissipation:
Collector to Emitter Voltage, V
Collector to Base Voltage, V
Collector to Substrate Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Operating Temperature Range
Storage Temperature Range
Soldering Information
− V
BE1
T
T
T
T
T
Dual-In-Line Package Soldering (10 Sec.)
Small Outline Package
Vapor Phase (60 Seconds)
Infrared (15 Seconds)
− I
FE
A
A
A
A
A
BE4
Parameter
− V
= 25˚C
= 25˚C to 55˚C
= 25˚C to 75˚C
IO2
>
>
)
|, |V
55˚C
75˚C
CBO
CEO
BE2
|
BE
BE4
)
|
)
)
− V
BE5
C
(BR)EBO
|,
(BR)CBO
(BR)CEO
EBO
CBO
)
CEO
)
(Note 1)
)
CIO
(Note 2)
I
I
I
I
V
V
V
V
V
V
V
C
C
C
E
CB
CE
CE
CE
CE
CE
CE
10 µA, I
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 10V, I
= 10V, I
= 3V
= 3V, I
= 3V
= 3V, I
= 3V, I
2
Distributors for availability and specifications. (T
25˚C)
C
C
C
C
B
Conditions
= 0
E
CI
E
B
= 1 mA
= 1 mA
= 1 mA
= 0
= 0
= 0
= 0
= 0
Transistor
260˚C
215˚C
220˚C
Each
I
I
300
300
I
I
I
E
E
−40˚C to +85˚C
−65˚C to +85˚C
C
C
C
Derate at 6.67
15
20
20
50
= 1 mA
= 10 mA
5
= 10 mA
= 1 mA
= 10 µA
LM3046
Package
Total
750
750
Min
20
15
20
40
5
mW/˚C
mW/˚C
Units
mW
mW
mW
Typ
mA
0.002
0.715
0.800
Limits
0.45
0.45
V
V
V
V
100
100
0.3
60
24
60
54
7
Max
0.5
40
2
5
5
Units
A
mV
mV
nA
µA
µA
V
V
V
V
V
=