LM3046MX/NOPB National Semiconductor, LM3046MX/NOPB Datasheet - Page 2
![IC TRANSISTOR ARRAY 14-SOIC](/photos/5/65/56572/pkg_m14a_sml.jpg)
LM3046MX/NOPB
Manufacturer Part Number
LM3046MX/NOPB
Description
IC TRANSISTOR ARRAY 14-SOIC
Manufacturer
National Semiconductor
Specifications of LM3046MX/NOPB
Transistor Type
5 NPN
Voltage - Collector Emitter Breakdown (max)
15V
Noise Figure (db Typ @ F)
3.25dB @ 1kHz
Power - Max
750mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 1mA, 3V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Transistor Polarity
NPN
Number Of Elements
5
Collector-emitter Voltage
15V
Collector-base Voltage
20V
Emitter-base Voltage
5V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
40
Power Dissipation
750mW
Frequency (max)
120MHz
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
14
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
*LM3046MX
*LM3046MX/NOPB
LM3046MX
*LM3046MX/NOPB
LM3046MX
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LM3046MX/NOPB
Manufacturer:
TI
Quantity:
3 000
www.national.com
Collector to Base Breakdown Voltage (V
Collector to Emitter Breakdown Voltage (V
Collector to Substrate Breakdown
Voltage (V
Emitter to Base Breakdown Voltage (V
Collector Cutoff Current (I
Collector Cutoff Current (I
Static Forward Current Transfer
Ratio (Static Beta) (h
Input Offset Current for Matched
Pair Q
Base to Emitter Voltage (V
Magnitude of Input Offset Voltage for
Differential Pair |V
Magnitude of Input Offset Voltage for Isolated
Transistors |V
|V
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” for other methods of soldering surface
mount devices.
Electrical Characteristics
(T
BE5
A
= 25˚C unless otherwise specified)
− V
1
and Q
BE3
(BR)CIO
|
BE3
2
|I
)
O1
Power Dissipation:
Collector to Emitter Voltage, V
Collector to Base Voltage, V
Collector to Substrate Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Operating Temperature Range
Storage Temperature Range
Soldering Information
− V
BE1
T
T
T
T
T
Dual-In-Line Package Soldering (10 Sec.)
Small Outline Package
Vapor Phase (60 Seconds)
Infrared (15 Seconds)
− I
FE
A
A
A
A
A
BE4
Parameter
− V
= 25˚C
= 25˚C to 55˚C
= 25˚C to 75˚C
IO2
>
>
)
|, |V
55˚C
75˚C
CBO
CEO
BE2
|
BE
BE4
)
|
)
)
− V
BE5
C
(BR)EBO
|,
(BR)CBO
(BR)CEO
EBO
CBO
)
CEO
)
(Note 1)
)
CIO
(Note 2)
I
I
I
I
V
V
V
V
V
V
V
C
C
C
E
CB
CE
CE
CE
CE
CE
CE
10 µA, I
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 10V, I
= 10V, I
= 3V
= 3V, I
= 3V
= 3V, I
= 3V, I
2
Distributors for availability and specifications. (T
25˚C)
C
C
C
C
B
Conditions
= 0
E
CI
E
B
= 1 mA
= 1 mA
= 1 mA
= 0
= 0
= 0
= 0
= 0
Transistor
260˚C
215˚C
220˚C
Each
I
I
300
300
I
I
I
E
E
−40˚C to +85˚C
−65˚C to +85˚C
C
C
C
Derate at 6.67
15
20
20
50
= 1 mA
= 10 mA
5
= 10 mA
= 1 mA
= 10 µA
LM3046
Package
Total
750
750
Min
20
15
20
40
5
mW/˚C
mW/˚C
Units
mW
mW
mW
Typ
mA
0.002
0.715
0.800
Limits
0.45
0.45
V
V
V
V
100
100
0.3
60
24
60
54
7
Max
0.5
40
2
5
5
Units
A
mV
mV
nA
µA
µA
V
V
V
V
V
=