LM3046MX/NOPB National Semiconductor, LM3046MX/NOPB Datasheet - Page 3

• Manufacturer Part Number: LM3046MX/NOPB
• Description: IC TRANSISTOR ARRAY 14-SOIC
• Manufacturer: National Semiconductor

Specifications of LM3046MX/NOPB

• Transistor Type: 5 NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Noise Figure (db Typ @ F): 3.25dB @ 1kHz
• Power - Max: 750mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (3.9mm Width), 14-SOL
• Transistor Polarity: NPN
• Number Of Elements: 5
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 40
• Power Dissipation: 750mW
• Frequency (max): 120MHz
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 14
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant
• Other names: *LM3046MX; *LM3046MX/NOPB; LM3046MX

Low Frequency Noise Figure (NF)
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
Short Circuit Input Impednace (h
Open Circuit Output Impedance (h
Open Circuit Reverse Voltage Transfer Ratio (h
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
Input Admittance (Y
Output Admittance (Y
Reverse Transfer Admittance (Y
Gain Bandwidth Product (f
Emitter to Base Capacitance (C
Collector to Base Capacitance (C
Collector to Substrate Capacitance (C
Temperature Coefficient of Base to
Emitter Voltage
Collector to Emitter Saturation Voltage (V
Temperature Coefficient of
Input Offset Voltage
Electrical Characteristics
(T
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point
in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
Electrical Characteristics
A
= 25˚C unless otherwise specified)
Parameter
ie
)
oe
Parameter
)
T
)
EB
fe
re
ie
CB
)
)
)
fe
)
oe
)
)
)
CI
)
CE(SAT)
(Continued)
re
)
)
f = 1 kHz, V
I
f = 1 kHz, V
I
f = 1 MHz, V
I
V
V
V
V
C
C
C
CE
EB
CB
CS
= 100 µA, R
= 1 mA
= 1 mA
= 3V, I
= 3V, I
= 3V, I
= 3V, I
V
I
V
B
CE
CE
= 1 mA, I
Conditions
= 3V, I
= 3V, I
E
C
C
C
3
CE
CE
CE
= 0
= 3 mA
= 0
= 0
S
= 3V,
= 3V,
= 3V,
= 1 kΩ
C
C
C
Conditions
= 1 mA
= 1 mA
= 10 mA
Min
300
0.001+j 0.03
Min
0.3+J 0.04
See Curve
1.8 x 10
31 − j 1.5
3.25
15.6
0.58
Typ
110
550
3.5
0.6
2.8
Typ
Limits
−1.9
0.23
1.1
−4
Max
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Max
mV/˚C
Units
µV/˚C
Units
µmho
kΩ
dB
pF
pF
pF
V