LM3046MX/NOPB National Semiconductor, LM3046MX/NOPB Datasheet - Page 3
![IC TRANSISTOR ARRAY 14-SOIC](/photos/5/65/56572/pkg_m14a_sml.jpg)
LM3046MX/NOPB
Manufacturer Part Number
LM3046MX/NOPB
Description
IC TRANSISTOR ARRAY 14-SOIC
Manufacturer
National Semiconductor
Specifications of LM3046MX/NOPB
Transistor Type
5 NPN
Voltage - Collector Emitter Breakdown (max)
15V
Noise Figure (db Typ @ F)
3.25dB @ 1kHz
Power - Max
750mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 1mA, 3V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Transistor Polarity
NPN
Number Of Elements
5
Collector-emitter Voltage
15V
Collector-base Voltage
20V
Emitter-base Voltage
5V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
40
Power Dissipation
750mW
Frequency (max)
120MHz
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
14
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
*LM3046MX
*LM3046MX/NOPB
LM3046MX
*LM3046MX/NOPB
LM3046MX
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LM3046MX/NOPB
Manufacturer:
TI
Quantity:
3 000
Low Frequency Noise Figure (NF)
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
Short Circuit Input Impednace (h
Open Circuit Output Impedance (h
Open Circuit Reverse Voltage Transfer Ratio (h
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
Input Admittance (Y
Output Admittance (Y
Reverse Transfer Admittance (Y
Gain Bandwidth Product (f
Emitter to Base Capacitance (C
Collector to Base Capacitance (C
Collector to Substrate Capacitance (C
Temperature Coefficient of Base to
Emitter Voltage
Collector to Emitter Saturation Voltage (V
Temperature Coefficient of
Input Offset Voltage
Electrical Characteristics
(T
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point
in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
Electrical Characteristics
A
= 25˚C unless otherwise specified)
Parameter
ie
)
oe
Parameter
)
T
)
EB
fe
re
ie
CB
)
)
)
fe
)
oe
)
)
)
CI
)
CE(SAT)
(Continued)
re
)
)
f = 1 kHz, V
I
f = 1 kHz, V
I
f = 1 MHz, V
I
V
V
V
V
C
C
C
CE
EB
CB
CS
= 100 µA, R
= 1 mA
= 1 mA
= 3V, I
= 3V, I
= 3V, I
= 3V, I
V
I
V
B
CE
CE
= 1 mA, I
Conditions
= 3V, I
= 3V, I
E
C
C
C
3
CE
CE
CE
= 0
= 3 mA
= 0
= 0
S
= 3V,
= 3V,
= 3V,
= 1 kΩ
C
C
C
Conditions
= 1 mA
= 1 mA
= 10 mA
Min
300
0.001+j 0.03
Min
0.3+J 0.04
See Curve
1.8 x 10
31 − j 1.5
3.25
15.6
0.58
Typ
110
550
3.5
0.6
2.8
Typ
Limits
−1.9
0.23
1.1
−4
Max
www.national.com
Max
mV/˚C
Units
µV/˚C
Units
µmho
kΩ
dB
pF
pF
pF
V