HFA3127BZ Intersil, HFA3127BZ Datasheet - Page 3

• Manufacturer Part Number: HFA3127BZ
• Description: IC TRANSISTOR ARRAY UHF 16-SOIC
• Manufacturer: Intersil

Specifications of HFA3127BZ

• Transistor Type: 5 NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 3.5dB @ 1GHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 2V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Module Configuration: Five
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 8V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 37mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -

Absolute Maximum Ratings
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Collector Current (100% Duty Cycle) . . . . . . 18.5mA at T
Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
Electrical Specifications
DC NPN CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
Collector to Emitter Breakdown
Voltage, V
Collector to Emitter Breakdown
Voltage, V
Emitter to Base Breakdown
Voltage, V
Collector-Cutoff-Current, I
Collector-Cutoff-Current, I
Collector to Emitter Saturation
Voltage, V
Base to Emitter Voltage, V
DC Forward-Current Transfer
Ratio, h
Early Voltage, V
Base to Emitter Voltage Drift
Collector to Collector Leakage
DYNAMIC NPN CHARACTERISTICS
Noise Figure
f
Product
1. θ
2. For θ
3. θ
T
Current Gain-Bandwidth
JA
JA
is measured with the component mounted on an evaluation PC board in free air.
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
FE
JC
(BR)CBO
(BR)CEO
(BR)CES
(BR)EBO
CE(SAT)
PARAMETER
PARAMETER
, the “case temp” location is the center of the exposed metal pad on the package underside.
A
CEO
CBO
BE
3
T
T
A
A
I
I
I
I
V
V
I
I
I
I
I
f = 1.0GHz, V
I
I
I
= 25°C
C
C
C
E
C
C
C
C
C
= 25°C
C
C
C
CE
CB
= 100µA, I
= 100µA, I
= 100µA, Base Shorted to Emitter
= 10µA, I
= 10mA, I
= 10mA
= 10mA, V
= 1mA, V
= 10mA
= 5mA, Z
= 1mA, V
= 10mA, V
HFA3046, HFA3096, HFA3127, HFA3128
= 6V, I
= 8V, I
TEST CONDITIONS
TEST CONDITIONS
34mA at T
37mA at T
B
E
C
CE
S
CE
B
E
B
= 0
= 0
CE
CE
CE
= 0
= 50Ω
= 1mA
= 0
= 0
= 3.5V
= 5V
= 2V
= 5V
= 5V,
J
J
J
= 150°C
= 125°C
= 110°C
Thermal Information
Thermal Resistance (Typical)
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C
14 Ld SOIC Package (Note 1) . . . . . . .
16 Ld SOIC Package (Note 1) . . . . . . .
QFN Package (Notes 2, 3). . . . . . . . . .
(SOIC - Lead Tips Only)
MIN
MIN
5.5
12
10
40
20
8
-
-
-
-
-
-
-
-
-
TYP
0.85
TYP
-1.5
DIE
130
DIE
0.1
0.3
3.5
5.5
18
12
20
50
6
2
1
8
MAX
MAX
0.95
100
0.5
10
-
-
-
-
-
-
-
-
-
-
-
MIN
MIN
5.5
12
10
40
20
8
-
-
-
-
-
-
-
-
-
SOIC, QFN
SOIC, QFN
TYP
0.85
TYP
130
-1.5
0.1
0.3
3.5
5.5
18
12
20
50
θ
6
2
1
8
JA
120
115
(°C/W)
57
MAX
MAX
0.95
100
0.5
10
December 21, 2005
-
-
-
-
-
-
-
-
-
-
-
θ
JC
FN3076.13
UNITS
UNITS
mV/°C
N/A
N/A
(°C/W)
10
GHz
GHz
nA
nA
pA
dB
V
V
V
V
V
V
V