HFA3127BZ Intersil, HFA3127BZ Datasheet - Page 3
![IC TRANSISTOR ARRAY UHF 16-SOIC](/photos/5/65/56533/20-16-soic_sml.jpg)
HFA3127BZ
Manufacturer Part Number
HFA3127BZ
Description
IC TRANSISTOR ARRAY UHF 16-SOIC
Manufacturer
Intersil
Datasheet
1.HFA3046B.pdf
(13 pages)
Specifications of HFA3127BZ
Transistor Type
5 NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
3.5dB @ 1GHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 2V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Module Configuration
Five
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
8V
Transition Frequency Typ Ft
8GHz
Power Dissipation Pd
150mW
Dc Collector Current
37mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HFA3127BZ
Manufacturer:
Intersil
Quantity:
528
Part Number:
HFA3127BZ
Manufacturer:
INTELS
Quantity:
20 000
Absolute Maximum Ratings
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Collector Current (100% Duty Cycle) . . . . . . 18.5mA at T
Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
Electrical Specifications
DC NPN CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
Collector to Emitter Breakdown
Voltage, V
Collector to Emitter Breakdown
Voltage, V
Emitter to Base Breakdown
Voltage, V
Collector-Cutoff-Current, I
Collector-Cutoff-Current, I
Collector to Emitter Saturation
Voltage, V
Base to Emitter Voltage, V
DC Forward-Current Transfer
Ratio, h
Early Voltage, V
Base to Emitter Voltage Drift
Collector to Collector Leakage
DYNAMIC NPN CHARACTERISTICS
Noise Figure
f
Product
1. θ
2. For θ
3. θ
T
Current Gain-Bandwidth
JA
JA
is measured with the component mounted on an evaluation PC board in free air.
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
FE
JC
(BR)CBO
(BR)CEO
(BR)CES
(BR)EBO
CE(SAT)
PARAMETER
PARAMETER
, the “case temp” location is the center of the exposed metal pad on the package underside.
A
CEO
CBO
BE
3
T
T
A
A
I
I
I
I
V
V
I
I
I
I
I
f = 1.0GHz, V
I
I
I
= 25°C
C
C
C
E
C
C
C
C
C
= 25°C
C
C
C
CE
CB
= 100µA, I
= 100µA, I
= 100µA, Base Shorted to Emitter
= 10µA, I
= 10mA, I
= 10mA
= 10mA, V
= 1mA, V
= 10mA
= 5mA, Z
= 1mA, V
= 10mA, V
HFA3046, HFA3096, HFA3127, HFA3128
= 6V, I
= 8V, I
TEST CONDITIONS
TEST CONDITIONS
34mA at T
37mA at T
B
E
C
CE
S
CE
B
E
B
= 0
= 0
CE
CE
CE
= 0
= 50Ω
= 1mA
= 0
= 0
= 3.5V
= 5V
= 2V
= 5V
= 5V,
J
J
J
= 150°C
= 125°C
= 110°C
Thermal Information
Thermal Resistance (Typical)
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C
14 Ld SOIC Package (Note 1) . . . . . . .
16 Ld SOIC Package (Note 1) . . . . . . .
QFN Package (Notes 2, 3). . . . . . . . . .
(SOIC - Lead Tips Only)
MIN
MIN
5.5
12
10
40
20
8
-
-
-
-
-
-
-
-
-
TYP
0.85
TYP
-1.5
DIE
130
DIE
0.1
0.3
3.5
5.5
18
12
20
50
6
2
1
8
MAX
MAX
0.95
100
0.5
10
-
-
-
-
-
-
-
-
-
-
-
MIN
MIN
5.5
12
10
40
20
8
-
-
-
-
-
-
-
-
-
SOIC, QFN
SOIC, QFN
TYP
0.85
TYP
130
-1.5
0.1
0.3
3.5
5.5
18
12
20
50
θ
6
2
1
8
JA
120
115
(°C/W)
57
MAX
MAX
0.95
100
0.5
10
December 21, 2005
-
-
-
-
-
-
-
-
-
-
-
θ
JC
FN3076.13
UNITS
UNITS
mV/°C
N/A
N/A
(°C/W)
10
GHz
GHz
nA
nA
pA
dB
V
V
V
V
V
V
V