BTW67-600 STMicroelectronics, BTW67-600 Datasheet - Page 3

IC SCR 50A 600V RD91-3

BTW67-600

Manufacturer Part Number
BTW67-600
Description
IC SCR 50A 600V RD91-3
Manufacturer
STMicroelectronics
Datasheet

Specifications of BTW67-600

Scr Type
Standard Recovery
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
1.3V
Voltage - On State (vtm) (max)
1.9V
Current - On State (it (av)) (max)
32A
Current - On State (it (rms)) (max)
50A
Current - Gate Trigger (igt) (max)
80mA
Current - Hold (ih) (max)
150mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
580A, 610A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
RD-91
Current - On State (it (rms) (max)
50A
Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max, Igt
80mA
Current It Av
32A
On State Rms Current It(rms)
50A
Peak Non Rep Surge Current Itsm 50hz
580A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6679
BTW67-600

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTW67-600
Manufacturer:
ST
0
Part Number:
BTW67-600
Manufacturer:
ST
Quantity:
20 000
Part Number:
BTW67-600/A
Manufacturer:
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Part Number:
BTW67-600RG
Manufacturer:
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Figure
impedance versus pulse duration
Figure 5: Surge peak on-state current versus
number of cycles
Figure 7: On-state characteristics (maximum
values)
600
100
1E+0
600
550
500
450
400
350
300
250
200
150
100
1E-2
1E-3
1E-1
10
50
0
1
0.0
1
1E-3
I
I
TM
TSM
K=[Z /R
(A)
R =8.5m
V =1.0V
T max.:
d
(A)
0.5
t0
j
T
3:
th
j
=max
Z
th(j-c)
Repetitive
T =75°C
1E-2
C
th
1.0
]
Relative
1.5
10
1E-1
BTW69
Z
th(j-a)
T =25°C
Non repetitive
T initial=25°C
Number of cycles
j
j
2.0
V
TM
t (s)
variation
p
2.5
1E+0
(V)
3.0
100
1E+1
3.5
of
4.0
t =10ms
p
One cycle
1E+2
thermal
4.5
5E+2
1000
5.0
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
2.5
2.0
1.5
1.0
0.5
0.0
5000
1000
100
-40
I
GT H L
0.01
I
TSM
,I ,I [T ] /
-20
(A), I t (A s)
dI/dt limitation
I
j
H
& I
2
L
0
I
GT H L
2
,I ,I [T =25°C]
20
BTW67 and BTW69 Series
0.10
I
GT
j
40
T (°C)
t (ms)
p
j
60
I
TSM
1.00
80
100
T initial = 25°C
j
120
I t
2
10.00
140
3/6

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