TN1625-1000G-TR STMicroelectronics, TN1625-1000G-TR Datasheet - Page 3

SCR GEN PURPOSE 1000V 16A D2PAK

TN1625-1000G-TR

Manufacturer Part Number
TN1625-1000G-TR
Description
SCR GEN PURPOSE 1000V 16A D2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of TN1625-1000G-TR

Scr Type
Standard Recovery
Voltage - Off State
1000V
Voltage - Gate Trigger (vgt) (max)
1.3V
Voltage - On State (vtm) (max)
1.6V
Current - On State (it (av)) (max)
10A
Current - On State (it (rms)) (max)
16A
Current - Gate Trigger (igt) (max)
25mA
Current - Hold (ih) (max)
40mA
Current - Off State (max)
5µA
Current - Non Rep. Surge 50, 60hz (itsm)
190A, 200A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Current - On State (it (rms) (max)
16A
Peak Repetitive Off-state Voltage, Vdrm
1kV
Gate Trigger Current Max, Igt
25mA
Current It Av
10A
On State Rms Current It(rms)
16A
Peak Non Rep Surge Current Itsm 50hz
190A
Holding Current Max Ih
40mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3740-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TN1625-1000G-TR
Manufacturer:
SILVERTEL
Quantity:
400
Part Number:
TN1625-1000G-TR
Manufacturer:
ST
0
TN1625, TYN616, TYN816
Figure 1.
Figure 3.
Figure 5.
16
14
12
10
2.0
1.0
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
1.5
0.5
8
6
4
2
0
0
-40
P(W)
I
0
I
GT H L
T(AV)
= 180°
,I ,I [T ] /
-20
(A)
2
= 180°
I
H
j
& I
25
Maximum average power
dissipation versus average on-state
current
Average and D.C. on-state current
versus ambient temperature
(copper surface under tab: S=1cm
(D
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature
L
0
I
GT H L
2
PAK)
,I ,I [T =25°C]
D.C.
I
GT
20
4
50
I
j
T(AV)
T
40
T (°C)
amb
j
6
(A)
(°C)
60
75
80
8
100
100
10
120
360°
125
140
2
12
)
Figure 2.
Figure 4.
Figure 6.
18
16
14
12
10
1.00
0.10
200
180
160
140
120
100
0.01
8
6
4
2
0
80
60
40
20
0
I
0
1E-3
T(AV)
1
I
TSM
K=[Z /R
(A)
(A)
th
Z
th(j-c)
1E-2
Repetitive
T =110°C
th
C
25
Average and D.C. on-state current
versus case temperature
Relative variation of thermal
impedance versus pulse duration
Surge peak on-state current versus
number of cycles
]
10
1E-1
Non repetitive
T initial=25°C
Number of cycles
50
j
Z
th(j-a)
T
case
t (s)
= 180°
D.C.
p
1E+0
(°C)
75
100
1E+1
Characteristics
100
t =10ms
p
One cycle
1E+2
5E+2
1000
125
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