TN1625-1000G-TR STMicroelectronics, TN1625-1000G-TR Datasheet - Page 4

• Manufacturer Part Number: TN1625-1000G-TR
• Description: SCR GEN PURPOSE 1000V 16A D2PAK
• Manufacturer: STMicroelectronics

Specifications of TN1625-1000G-TR

• Scr Type: Standard Recovery
• Voltage - Off State: 1000V
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 10A
• Current - On State (it (rms)) (max): 16A
• Current - Gate Trigger (igt) (max): 25mA
• Current - Hold (ih) (max): 40mA
• Current - Off State (max): 5µA
• Current - Non Rep. Surge 50, 60hz (itsm): 190A, 200A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current - On State (it (rms) (max): 16A
• Peak Repetitive Off-state Voltage, Vdrm: 1kV
• Gate Trigger Current Max, Igt: 25mA
• Current It Av: 10A
• On State Rms Current It(rms): 16A
• Peak Non Rep Surge Current Itsm 50hz: 190A
• Holding Current Max Ih: 40mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3740-2

Characteristics
4/9
Figure 7.
Figure 9.
80
70
60
50
40
30
20
10
2000
1000
0
100
10
0
R
0.01
th(j-a)
I
TSM
4
(°C/W)
(A), I t (A s)
dI/dt limitation
8
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
corresponding values of I
Thermal resistance junction to
ambient versus copper surface
under tab
(epoxy printed circuit board FR4,
copper thickness: 35 µm) (D
2
2
12
0.10
p
16
< 10 ms, and
S(cm²)
t (ms)
p
20
24
1.00
28
I
TSM
I t
2
32
2
t
T initial = 25°C
j
2
PAK)
36
10.00
40
Figure 8.
200
100
10
1
0.0
I
TM
(A)
V =0.77V
R =23m
T max.:
t0
d
j
0.5
T
j
=max
On-state characteristics (maximum
values)
1.0
1.5
T =25°C
j
2.0
V
TN1625, TYN616, TYN816
TM
(V)
2.5
3.0
3.5
4.0
4.5